SNVS676I August   2010  – April  2018 LM5119

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Application Circuit
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  High Voltage Start-Up Regulator
      2. 7.3.2  UVLO
      3. 7.3.3  Enable 2
      4. 7.3.4  Oscillator and Sync Capability
      5. 7.3.5  Error Amplifiers and PWM Comparators
      6. 7.3.6  Ramp Generator
      7. 7.3.7  Current Limit
      8. 7.3.8  Hiccup Mode Current Limiting
      9. 7.3.9  Soft Start
      10. 7.3.10 HO and LO Output Drivers
      11. 7.3.11 Maximum Duty Cycle
      12. 7.3.12 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Diode Emulation
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Miscellaneous Functions
      2. 8.1.2 Interleaved Two-Phase Operation
      3. 8.1.3 Interleaved 4-Phase Operation
    2. 8.2 Typical Applications
      1. 8.2.1 Dual-output Design Example
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Timing Resistor
          2. 8.2.1.2.2  Output Inductor
          3. 8.2.1.2.3  Current Sense Resistor
          4. 8.2.1.2.4  Ramp Resistor and Ramp Capacitor
          5. 8.2.1.2.5  Output Capacitors
          6. 8.2.1.2.6  Input Capacitors
          7. 8.2.1.2.7  VCC Capacitor
          8. 8.2.1.2.8  Bootstrap Capacitor
          9. 8.2.1.2.9  Soft-Start Capacitor
          10. 8.2.1.2.10 Restart Capacitor
          11. 8.2.1.2.11 Output Voltage Divider
          12. 8.2.1.2.12 UVLO Divider
            1. 8.2.1.2.12.1 MOSFET Selection
          13. 8.2.1.2.13 MOSFET Snubber
          14. 8.2.1.2.14 Error Amplifier Compensation
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Two-Phase Design Example
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Switching Jitter Root Causes and Solutions
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Pin Configuration and Functions

RTV Package
32-Pin WQFN
Top View
LM5119 pinout_rtv32_slusd97.gif

Pin Functions

PIN TYPE(1) DESCRIPTION
NAME NO.
AGND 12 G Analog ground. Return for the internal 0.8-V voltage reference and analog circuits.
COMP1 10 O Output of the channel1 internal error amplifier. The loop compensation network must be connected between this pin and the FB1 pin.
COMP2 15 O Output of the channel2 internal error amplifier. The loop compensation network must be connected between this pin and the FB2 pin.
CS1 5 I Current sense amplifier input. Connect to the high side of the channel1 current sense resistor.
CS2 20 I Current sense amplifier input. Connect to the high side of the channel2 current sense resistor.
CSG1 4 I Kelvin ground connection to the external current sense resistor. Connect directly to the low side of the channel1 current sense resistor.
CSG2 21 I Kelvin ground connection to the external current sense resistor. Connect directly to the low side of the channel2 current sense resistor.
DEMB 17 I Logic input that enables diode emulation when in the low state. In diode emulation mode, the low-side MOSFET is latched off for the remainder of the PWM cycle when the buck inductor current reverses direction (current flow from output to ground). When DEMB is high, diode emulation is disabled allowing current to flow in either direction through the low-side MOSFET. A 50-kΩ pulldown resistor internal to the LM5119 holds DEMB pin low and enables diode emulation if the pin is left floating.
EN2 11 I If the EN2 pin is low, channel2 is disabled. Channel1 and all other functions remain active. The EN2 has a 50-kΩ pullup resistor to enable channel2 when the pin is left floating.
FB1 9 I Feedback input and inverting input of the channel1 internal error amplifier. A resistor divider from the channel1 output to this pin sets the output voltage level. The regulation threshold at the FB1 pin is 0.8 V.
FB2 16 I Feedback input and inverting input of the channel2 internal error amplifier. A resistor divider from the channel2 output to this pin sets the output voltage level. The regulation threshold at the FB2 pin is 0.8 V.
HB1 30 P High-side driver supply for bootstrap gate drive. Connect to the cathode of the channel1 external bootstrap diode and to the bootstrap capacitor. The bootstrap capacitor supplies current to charge the high-side MOSFET gate and must be placed as close to controller as possible.
HB2 27 P High-side driver supply for bootstrap gate drive. Connect to the cathode of the channel2 external bootstrap diode and to the bootstrap capacitor. The bootstrap capacitor supplies current to charge the high-side MOSFET gate and must be placed as close to the controller as possible.
HO1 31 O High-side MOSFET gate drive output. Connect to the gate of the channel1 high-side MOSFET through a short, low inductance path.
HO2 26 O High-side MOSFET gate drive output. Connect to the gate of the channel2 high-side MOSFET through a short, low inductance path.
LO1 2 O Low-side MOSFET gate drive output. Connect to the gate of the channel1 low-side synchronous MOSFET through a short, low inductance path.
LO2 23 O Low-side MOSFET gate drive output. Connect to the gate of the channel2 low-side synchronous MOSFET through a short, low inductance path.
PGND1 3 G Power ground return pin for low-side MOSFET gate driver. Connect directly to the low side of the channel1 current sense resistor.
PGND2 22 G Power ground return pin for low-side MOSFET gate driver. Connect directly to the low side of the channel2 current sense resistor.
RAMP1 6 I PWM ramp signal. An external resistor and capacitor connected between the SW1 pin, the RAMP1 pin and the AGND pin sets the channel1 PWM ramp slope. Proper selection of component values produces a RAMP1 signal that emulates the current in the buck inductor.
RAMP2 19 I PWM ramp signal. An external resistor and capacitor connected between the SW2 pin, the RAMP2 pin and the AGND pin sets the channel2 PWM ramp slope. Proper selection of component values produces a RAMP2 signal that emulates the current in the buck inductor.
RES 14 O The restart timer pin for an external capacitor that configures the hiccup mode current limiting. A capacitor on the RES pin determines the time the controller remains off before automatically restarting in hiccup mode. The two regulator channels operate independently. One channel may operate in normal mode while the other is in hiccup mode overload protection. The hiccup mode commences when either channel experiences 256 consecutive PWM cycles with cycle-by-cycle current limiting. After this occurs, a 10-µA current source charges the RES pin capacitor to the 1.25-V threshold which restarts the overloaded channel.
RT 13 I The internal oscillator is set with a single resistor between RT and AGND. The recommended maximum oscillator frequency is 1.5 MHz which corresponds to a maximum switching frequency of 750 kHz for either channel. The internal oscillator can be synchronized to an external clock by coupling a positive pulse into RT through a small coupling capacitor.
SS1 7 I An external capacitor and an internal 10-µA current source set the ramp rate of the channel1 error amp reference. The SS1 pin is held low when VCC1 or VCC2 < 4.9 V, UVLO < 1.25 V or during thermal shutdown.
SS2 18 I An external capacitor and an internal 10-µA current source set the ramp rate of the channel2 error amp reference. The SS2 pin is held low when VCC1 or VCC2 < 4.9 V, UVLO < 1.25 V or during thermal shutdown.
SW1 32 I/O Switching node of the buck regulator. Connect to channel1 bootstrap capacitor, the source terminal of the high-side MOSFET and the drain terminal of the low-side MOSFET.
SW2 25 I/O Switching node of the buck regulator. Connect to channel2 bootstrap capacitor, the source terminal of the high-side MOSFET and the drain terminal of the low-side MOSFET.
UVLO 28 I Undervoltage lockout programming pin. If the UVLO pin is below 0.4 V, the regulator is in the shutdown mode with all function disabled. If the UVLO pin is greater than 0.4 V and below 1.25 V, the regulator is in standby mode with the VCC regulators operational, the SS pins grounded and no switching at the HO and LO outputs. If the UVLO pin voltage is above 1.25 V, the SS pins are allowed to ramp and pulse width modulated gate drive signals are delivered at the LO and HO pins. A 20-µA current source is enabled when UVLO exceeds 1.25 V and flows through the external UVLO resistors to provide hysteresis.
VCCDIS 8 I Optional input that disables the internal VCC regulators when external biasing is supplied. If VCCDIS > 1.25 V, the internal VCC regulators are disabled. The externally supplied bias must be coupled to the VCC pins through a diode. VCCDIS has a 500-kΩ pulldown resistor to ground to enable the VCC regulators when the pin is left floating. The pulldown resistor can be overridden by pulling VCCDIS above 1.25 V with a resistor divider connected to the external bias supply.
VIN 29 P Supply voltage input source for the VCC regulators.
Thermal Pad — Thermal pad of WQFN package. No internal electrical connections. Solder to the ground plane to reduce thermal resistance.
(1) G = Ground, I = Input, O = Output, P = Power