SLVSGN5 October   2022 LM51231-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Device Enable/Disable (EN, VH Pin)
      2. 7.3.2  High Voltage VCC Regulator (BIAS, VCC Pin)
      3. 7.3.3  Light Load Switching Mode Selection (MODE Pin)
      4. 7.3.4  VOUT Range Selection (RANGE Pin)
      5. 7.3.5  Line Undervoltage Lockout (UVLO Pin)
      6. 7.3.6  Fast Restart using VCC HOLD (VH Pin)
      7. 7.3.7  Adjustable Output Regulation Target (VOUT, TRK, VREF Pin)
      8. 7.3.8  Overvoltage Protection (VOUT Pin)
      9. 7.3.9  Power Good Indicator (PGOOD Pin)
      10. 7.3.10 Dynamically Programmable Switching Frequency (RT)
      11. 7.3.11 External Clock Synchronization (SYNC Pin)
      12. 7.3.12 Programmable Spread Spectrum (DITHER Pin)
      13. 7.3.13 Programmable Soft-start (SS Pin)
      14. 7.3.14 Wide Bandwidth Transconductance Error Amplifier and PWM (TRK, COMP Pin)
      15. 7.3.15 Current Sensing and Slope Compensation (CSP, CSN Pin)
      16. 7.3.16 Constant Peak Current Limit (CSP, CSN Pin)
      17. 7.3.17 Maximum Duty Cycle and Minimum Controllable On-time Limits
      18. 7.3.18 MOSFET Drivers, Integrated Boot Diode, and Hiccup Mode Fault Protection (LO, HO, HB Pin)
      19. 7.3.19 Thermal Shutdown Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device Status
        1. 7.4.1.1 Shutdown Mode
        2. 7.4.1.2 Configuration Mode
        3. 7.4.1.3 Active Mode
        4. 7.4.1.4 Bypass Mode
          1. 7.4.1.4.1 Bypass DE mode
          2. 7.4.1.4.2 Bypass FPWM
      2. 7.4.2 Light Load Switching Mode
        1. 7.4.2.1 Forced PWM (FPWM) Mode
        2. 7.4.2.2 Diode Emulation (DE) Mode
        3. 7.4.2.3 Forced Diode Emulation Operation in FPWM Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Ideas
      4. 8.2.4 Application Curves
    3. 8.3 System Example
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

Typical values correspond to TJ = 25 °C. Minimum and maximum limits apply over TJ = -40 °C to 125 °C. Unless otherwise stated, VBIAS = 12 V, VVOUT = 12 V, RT = 9.09 kΩ, , RVREF = 65 kΩ
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT(BIAS, VCC, VOUT)
IBIAS-SD BIAS current in shutdown VUVLO = 0 V, VOUT = 11.3 V 2.5 5 µA
IBIAS-ACTIVE BIAS current in active (Non-switching, VCC is supplied by BIAS) VUVLO = 2.5 V, VTRK = 0.6 V 1.22 1.52 mA
IBIAS-BYP BIAS current in bypass mode VUVLO = 2.5 V, VTRK = 0.25 V 1.22 1.52 mA
IVOUT-SD VOUT current in shutdown VUVLO = 0 V, VOUT = 11.3 V 1 µA
IVOUT-BYP-DE VOUT current in bypass mode VUVLO = 2.5 V, VTRK = 0.25 V, VVOUT = 12 V, MODE = GND 100 115 µA
IVOUT-BYP-FPWM VOUT current in bypass mode VUVLO = 2.5 V, VTRK = 0.25 V, VVOUT = 12 V, MODE = VCC 240 276 µA
IVOUT-ACTIVE VOUT current in active (Non-switching) (DE mode) VUVLO = 2.5 V, VTRK = 0.6 V, MODE = GND 90 105 µA
VOUT current in active (Non-switching), (FPWM)  VUVLO = 2.5 V, VTRK = 0.6 V, MODE = VCC 240 276 µA
IBATTERY-SD Battery drain in shutdown VUVLO = 0 V, VOUT = 11.3 V 2.5 5 µA
IBATTERY-DE Battery drain in bypass mode (DE mode) VUVLO = 2.5 V, VTRK = 0.25 V, MODE = GND 1.44 1.59 mA
IBATTERY-FPWM Battery drain in bypass mode (FPWM) VUVLO = 2.5 V, VTRK = 0.25 V, MODE = VCC 1.58 1.74 mA
ENABLE, UVLO
VEN-RISING Enable threshold EN rising 0.45 0.55 0.65 V
VEN-FALLING Enable threshold EN falling 0.35 0.45 0.55 V
VEN-HYS Enable hysteresis EN falling 55 90 130 mV
IUVLO-HYS UVLO pull-down hysteresis current VUVLO = 0.7 V 8 10 12 µA
VUVLO-RISING UVLO threshold UVLO rising 1.05 1.1 1.15 V
VUVLO-FALLING UVLO threshold UVLO falling 1.025 1.075 1.125 V
VUVLO-HYS UVLO hysteresis UVLO falling 25 mV
SYNC/DITHER/VH
VSYNC-RISING SYNC threshold/SYNC detection threshold SYNC rising 2 V
VSYNC-FALLING SYNC threshold SYNC falling 0.4 V
Minimum SYNC pull up pulse width 100 ns
IDITHER Dither source/sink current 16 21 26 µA
ΔfSW1 fSW Modulation (Upper Limit) 5%
ΔfSW2 fSW Modulation (Lower Limit) -6%
VDITHER-FALLING Dither disable threshold 0.65 0.75 0.85 V
VCC
VVCC-REG1 VCC regulation IVCC = 100 mA 4.75 5 5.25 V
VVCC-REG2 VCC regulation No load 4.75 5 5.25 V
VVCC-REG3 VCC regulation during dropout VBIAS = 3.8V, IVCC = 100 mA 3.45 V
VVCC-UVLO-RISING VCC UVLO threshold VCC rising 3.55 3.65 3.75 V
VVCC-UVLO-FALLING VCC UVLO threshold VCC falling 3.2 3.3 3.4 V
IVCC-CL VCC sourcing current limit VVCC = 4 V 100 mA
CONFIGURATION (MODE)
VMODE-RISING FPWM mode threshold MODE rising 2.0 V
VMODE-FALLING Diode emulation mode threshold MODE falling 0.4 V
RT
VRT RT regulation 0.5 V
VREF, TRK, VOUT
VREF VREF regulation target 0.99 1 1.005 V
VOUT-REG VOUT regulation target1 with resistor divider (lower VOUT range) VREF resistor divider to make VTRK = 0.25 V, RVREF = 65 kΩ 4.915 5 5.085 V
VOUT-REG VOUT regulation target2 with resistor divider (lower VOUT range) VREF resistor divider to make VTRK = 0.5 V, RVREF = 65 kΩ 9.9 10 10.1 V
VOUT-REG VOUT regulation target3 with resistor divider (lower VOUT range) VREF resistor divider to make VTRK = 1.0 V, RVREF = 65 kΩ 19.8 20 20.2 V
VOUT-REG VOUT regulation target4 with resistor divider (upper VOUT range) VREF resistor divider to make VTRK = 0.25 V, RVREF = 35 kΩ 14.74 15 15.24 V
VOUT-REG VOUT regulation target5 with resistor divider (upper VOUT range) VREF resistor divider to make VTRK = 0.5 V, RVREF = 35 kΩ 29.7 30 30.3 V
VOUT-REG VOUT regulation target6 with resistor divider (upper VOUT range) VREF resistor divider to make VTRK = 0.95 V, RVREF = 35 kΩ 56.43 57 57.57 V
VOUT-REG VOUT regulation target1 using TRK (lower VOUT range) VTRK = 0.25 V, RVREF = 65 kΩ 4.91 5 5.09 V
VOUT-REG VOUT regulation target2 using TRK (lower VOUT range) VTRK = 0.5 V, RVREF = 65 kΩ 9.88 10 10.11 V
VOUT-REG VOUT regulation target3 using TRK (lower VOUT range) VTRK = 1.0 V, RVREF = 65 kΩ 19.8 20 20.2 V
VOUT-REG VOUT regulation target4 using TRK (upper VOUT range) VTRK = 0.25 V, RVREF = 35 kΩ 14.71 15 15.25 V
VOUT-REG VOUT regulation target5 using TRK (upper VOUT range) VTRK = 0.5 V, RVREF = 35 kΩ 29.6 30 30.3 V
VOUT-REG VOUT regulation target6 using TRK (upper VOUT range) VTRK = 0.95 V, RVREF = 35 kΩ 56.45 57 57.5 V
ITRK TRK bias current 1 µA
SOFT START, DE to FPWM TRANSITION
ISS Soft-start current 17 20 23 µA
VSS-DONE MODE transition start SS rising 1.3 1.5 1.7 V
RSS SS pull-down switch RDSON 30 70 Ω
VSS-DIS SS discharge detection threshold 30 50 75 mV
VSS-FB internal SS to FB clamp VFB=0V 55 75 mV
CURRENT SENSE (CSP, CSN, SW, SENSE)
VSLOPE Peak slope compensation amplitude RT = 220 kΩ, Referenced to CS input 45 mV
ACS Current sense amplifier gain CSP=3.0V 10 V/V
Current sense amplifier gain CSP=1.5V 10 V/V
VCLTH Positive peak current limit threshold (CSP-CSN) CSP=3.0V, MODE = GND 52 60 68 mV
Positive peak current limit threshold (CSP-CSN) CSP=1.5V, MODE = GND 51 60 72 mV
VZCD-DE ZCD threshold (SW-SENSE) MODE = GND 4 mV
VI-NEG-FPWM Negative current limit threshold (SW-SENSE) MODE = VCC –150 mV
VCS-FWD Forward current threshold voltage to enter bypass mode (CSP-CSN) VULVO = 2.5 V, VTRK = 0.25 V 2 6 10 mV
VZCD-BYP Zero cross detection in bypass mode (DE mode) (SW-SENSE) VULVO = 2.5 V, VTRK = 0.25 V, MODE = GND -5 mV
VI-NEG-BYP Negative current limit in bypass mode (FPWM) (SW-SENSE) VULVO = 2.5 V, VTRK = 0.25 V, MODE = VCC -150 mV
ICSN CSN bias current 1 µA
ICSP CSP bias current 110 µA
BOOT FAULT PROTECTION (HB)
Maximum replenish pulse cycles 4 cycles
Replenish off cycles 12 cycles
Number of sets to enter hiccup mode protection 4 sets
Off-cycle during hiccup mode off 512 cycles
ERROR AMPLIFIER (COMP)
Gm Transconductance 1 mA/V
ISOURCE-MAX Maximum COMP sourcing current VCOMP=0V 95 µA
ISINK-MAX Maximum COMP sinking current VCOMP=1.8V 90 µA
VCLAMP-MAX COMP maximum clamp voltage COMP rising 2.05 2.4 2.8 V
VCLAMP-MIN COMP minimum clamp voltage COMP falling 0.65 V
PULSE WIDTH MODULATION (PWM)
fSW1 Switching frequency RT = 220 kΩ 85 100 115 kHz
fSW2 Switching frequency RT = 9.09 kΩ 1980 2200 2420 kHz
tON-MIN Minimum controllable on-time RT = 9.09 kΩ 14 20 50 ns
tOFF-MIN Minimum forced off-time RT = 9.09 kΩ 70 95 115 ns
DMAX1 Maximum duty cycle limit  RT = 220kΩ 90% 94% 98%
DMAX2 Maximum duty cycle limit  RT = 9.09 kΩ 75% 80% 83%
PGOOD, OVP
VOVTH-RISING Overvoltage threshold (OVP threshold) VOUT rising (referenced to VOUT-REG) 108.5% 110% 113.5%
VOVTH-FALLING Overvoltage threshold (OVP threshold) VOUT falling (referenced to VOUT-REG) 100.5% 103% 105.5%
VOVTH-DLY Delay before entering bypass mode 30 us
VUVTH-RISING Undervoltage threshold (PGOOD threshold) VOUT rising (referenced to VOUT-REG) 91.5% 94% 98%
VUVTH-FALLING Undervoltage threshold (PGOOD threshold) VOUT falling (referenced to VOUT-REG) 89.5% 92% 95.5%
UV comparator deglitch filter Rising edge 26 µs
UV comparator deglitch filter Falling edge 21 µs
RPGOOD PGOOD pull-down switch RDSON 90 180 Ω
Minimum BIAS for valid PGOOD 2.5 V
MOSFET DRIVER
High-state voltage drop (HO driver) 100mA sinking 0.08 0.15 V
Low-state voltage drop (HO driver) 100mA sourcing 0.04 0.1 V
High-state voltage drop (LO driver) 100mA sinking 0.08 0.17 V
Low-state voltage drop (LO driver) 100mA sourcing 0.04 0.1 V
VHB-UVLO HB-SW UVLO threshold HB-SW falling 2.2 2.5 3.0 V
tDHL HO off to LO on deadtime 20 ns
tDLH LO off to HO on deadtime 22 ns
HB diode resistance 1.2 Ω
ICP HB charge pump current BIAS=3.8V 30 55 µA
THERMAL SHUTDOWN
TTSD-RISING Thermal shutdown threshold Temperature rising 175 °C
TTSD-HYS Thermal shutdown hysteresis 15 °C