SNVSC77 December   2024 LM5125-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Device Configuration (CFG0-pin, CFG1-pin, CFG2-pin)
      2. 6.3.2  Switching Frequency and Synchronization (SYNCIN)
      3. 6.3.3  Dual Random Spread Spectrum (DRSS)
      4. 6.3.4  Operation Modes (BYPASS, DEM, FPWM)
      5. 6.3.5  Dual- and Multi-phase Operation
      6. 6.3.6  BIAS (BIAS-pin)
      7. 6.3.7  Soft Start (SS-pin)
      8. 6.3.8  VOUT Programming (VOUT, ATRK, DTRK)
      9. 6.3.9  Protections
      10. 6.3.10 VOUT Overvoltage Protection (OVP)
      11. 6.3.11 Thermal Shutdown (TSD)
      12. 6.3.12 Power-Good Indicator (PGOOD-pin)
      13. 6.3.13 Current Sensing, Peak Current Limit, and Slope Compensation (CSP1, CSP2, CSN1, CSN2)
      14. 6.3.14 Current Sense Programming (CSP1, CSP2, CSN1, CSN2)
      15. 6.3.15 Input Current Limit and Monitoring (ILIM, IMON, DLY)
      16. 6.3.16 Signal Deglitch Overview
      17. 6.3.17 MOSFET Drivers, Integrated Boot Diode, and Hiccup Mode Fault Protection (LOx, HOx, HBx-pin)
    4. 6.4 Device Functional Modes
      1. 6.4.1 Shutdown State
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Feedback Compensation
    2. 7.2 Typical Application
      1. 7.2.1 Application
      2. 7.2.2 Design Requirements
      3. 7.2.3 Detailed Design Procedure
        1. 7.2.3.1  Determine the Total Phase Number
        2. 7.2.3.2  Determining the Duty Cycle
        3. 7.2.3.3  Timing Resistor RT
        4. 7.2.3.4  Inductor Selection Lm
        5. 7.2.3.5  Current Sense Resistor Rcs
        6. 7.2.3.6  Current Sense Filter RCSFP, RCSFN, CCS
        7. 7.2.3.7  Low-Side Power Switch QL
        8. 7.2.3.8  High-Side Power Switch QH and Additional Parallel Schottky Diode
        9. 7.2.3.9  Snubber Components
        10. 7.2.3.10 Vout Programming
        11. 7.2.3.11 Input Current Limit (ILIM/IMON)
        12. 7.2.3.12 UVLO Divider
        13. 7.2.3.13 Soft Start
        14. 7.2.3.14 CFG Settings
        15. 7.2.3.15 Output Capacitor Cout
        16. 7.2.3.16 Input Capacitor Cin
        17. 7.2.3.17 Bootstrap Capacitor
        18. 7.2.3.18 VCC Capacitor CVCC
        19. 7.2.3.19 BIAS Capacitor
        20. 7.2.3.20 VOUT Capacitor
        21. 7.2.3.21 Loop Compensation
      4. 7.2.4 Application Curves
        1. 7.2.4.1 Efficiency
        2. 7.2.4.2 Steady State Waveforms
        3. 7.2.4.3 Step Load Response
        4. 7.2.4.4 Sync Operation
        5. 7.2.4.5 Thermal Performance
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Tape and Reel Information
    2.     85

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)

7.2.3.7 Low-Side Power Switch QL

Select a logic level N-channel MOSFET that 5V VCC is sufficient to completely enhance the MOSFET. Also, note the minimum HOx-SWx voltage is 3.75V during bypass operation. Make sure the MOSFET is turned on at this voltage.

Selection of the power MOSFET devices by breaking down the losses is one way to compare the relative efficiencies of different devices. Losses in the low-side MOSFET device can be separated into conduction loss and switching loss.

Low-side conduction loss is approximately calculated as follows:

Equation 38. PCOND_LS=D×Iin2×RDS(on)×1.3

Where, the factor of 1.3 accounts for the increase in the MOSFET on-resistance due to heating. Alternatively, the factor of 1.3 can be eliminated and the high temperature on-resistance of the MOSFET can be estimated using the RDS(ON) vs temperature curves in the MOSFET datas heet.

Switching loss occurs during the brief transition period as the low-side MOSFET turns on and off. During the transition period both current and voltage are present in the channel of the MOSFET device. The low-side switching loss is approximately calculated as follows:

Equation 39. PSW_LS=0.5×Vout×Iin×tR+tF×fsw

tR and tF are the rise and fall times of the low-side MOSFET. The rise and fall times are usually mentioned in the MOSFET data sheet or can be empirically observed with an oscilloscope.

Reverse recovery of the high-side MOSFET increases the fall time and turn on current of the low-side MOSFET resulting in higher turn on loss.

An additional Schottky diode can be placed in parallel with the low-side MOSFET, with short connections to the source and drain in order to minimize negative voltage spikes at the SW node.