SNVSC77 December   2024 LM5125-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Device Configuration (CFG0-pin, CFG1-pin, CFG2-pin)
      2. 6.3.2  Switching Frequency and Synchronization (SYNCIN)
      3. 6.3.3  Dual Random Spread Spectrum (DRSS)
      4. 6.3.4  Operation Modes (BYPASS, DEM, FPWM)
      5. 6.3.5  Dual- and Multi-phase Operation
      6. 6.3.6  BIAS (BIAS-pin)
      7. 6.3.7  Soft Start (SS-pin)
      8. 6.3.8  VOUT Programming (VOUT, ATRK, DTRK)
      9. 6.3.9  Protections
      10. 6.3.10 VOUT Overvoltage Protection (OVP)
      11. 6.3.11 Thermal Shutdown (TSD)
      12. 6.3.12 Power-Good Indicator (PGOOD-pin)
      13. 6.3.13 Current Sensing, Peak Current Limit, and Slope Compensation (CSP1, CSP2, CSN1, CSN2)
      14. 6.3.14 Current Sense Programming (CSP1, CSP2, CSN1, CSN2)
      15. 6.3.15 Input Current Limit and Monitoring (ILIM, IMON, DLY)
      16. 6.3.16 Signal Deglitch Overview
      17. 6.3.17 MOSFET Drivers, Integrated Boot Diode, and Hiccup Mode Fault Protection (LOx, HOx, HBx-pin)
    4. 6.4 Device Functional Modes
      1. 6.4.1 Shutdown State
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Feedback Compensation
    2. 7.2 Typical Application
      1. 7.2.1 Application
      2. 7.2.2 Design Requirements
      3. 7.2.3 Detailed Design Procedure
        1. 7.2.3.1  Determine the Total Phase Number
        2. 7.2.3.2  Determining the Duty Cycle
        3. 7.2.3.3  Timing Resistor RT
        4. 7.2.3.4  Inductor Selection Lm
        5. 7.2.3.5  Current Sense Resistor Rcs
        6. 7.2.3.6  Current Sense Filter RCSFP, RCSFN, CCS
        7. 7.2.3.7  Low-Side Power Switch QL
        8. 7.2.3.8  High-Side Power Switch QH and Additional Parallel Schottky Diode
        9. 7.2.3.9  Snubber Components
        10. 7.2.3.10 Vout Programming
        11. 7.2.3.11 Input Current Limit (ILIM/IMON)
        12. 7.2.3.12 UVLO Divider
        13. 7.2.3.13 Soft Start
        14. 7.2.3.14 CFG Settings
        15. 7.2.3.15 Output Capacitor Cout
        16. 7.2.3.16 Input Capacitor Cin
        17. 7.2.3.17 Bootstrap Capacitor
        18. 7.2.3.18 VCC Capacitor CVCC
        19. 7.2.3.19 BIAS Capacitor
        20. 7.2.3.20 VOUT Capacitor
        21. 7.2.3.21 Loop Compensation
      4. 7.2.4 Application Curves
        1. 7.2.4.1 Efficiency
        2. 7.2.4.2 Steady State Waveforms
        3. 7.2.4.3 Step Load Response
        4. 7.2.4.4 Sync Operation
        5. 7.2.4.5 Thermal Performance
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Tape and Reel Information
    2.     85

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)

7.2.3.8 High-Side Power Switch QH and Additional Parallel Schottky Diode

Losses in the high-side MOSFET device can be separated into conduction loss, dead-time loss, and reverse recovery loss. Switching loss is calculated for the low-side MOSFET device only. Switching loss in the high-side MOSFET device is negligible because the body diode of the high-side MOSFET device turns on before and after the high-side MOSFET device switches.

High-side conduction loss is approximately calculated as follows:

Equation 40. PCOND_HS=D'×Iin2×RDS(on)×1.3

Dead-time loss is approximately calculated as follows:

Equation 41. PDT_HS=VD×Iin×tDLH+tDHL×fsw

where

  • VD is the forward voltage drop of the high-side MOSFET body diode.
  • tDLH is the deadtime between low side switch turn-off and high side switch turn-on.
  • tDHL is the deadtime between high side switch turn-off and low side switch turn-on.

Reverse recovery characteristics of the high-side MOSFET switch strongly affect efficiency, especially when the output voltage is high. Small reverse recovery charge helps to increase the efficiency while also minimizes switching noise.

Reverse recovery loss is approximately calculated as follows:

Equation 42. PRR_HS=Vout×QRR×fsw

where

  • QRR is the reverse recovery charge of the high-side MOSFET body diode.

An additional Schottky diode can be placed in parallel with the high-side switch to improve efficiency. Usually, the power rating of this parallel Schottky diode can be less than the high-side switch because the diode conducts only during dead-times. The power rating of the parallel diode must be high enough to handle inrush current at startup, any load exists before switching, hiccup mode operation, and so forth.