SNVSAY4F august   2018  – august 2023 LM5155-Q1 , LM51551-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Description (continued)
  7. 6 Device Comparison Table
  8. 7 Pin Configuration and Functions
  9. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Line Undervoltage Lockout (UVLO/SYNC Pin)
      2. 9.3.2  High Voltage VCC Regulator (BIAS, VCC Pin)
      3. 9.3.3  Soft Start (SS Pin)
      4. 9.3.4  Switching Frequency (RT Pin)
      5. 9.3.5  Clock Synchronization (UVLO/SYNC Pin)
      6. 9.3.6  Current Sense and Slope Compensation (CS Pin)
      7. 9.3.7  Current Limit and Minimum On-time (CS Pin)
      8. 9.3.8  Feedback and Error Amplifier (FB, COMP Pin)
      9. 9.3.9  Power-Good Indicator (PGOOD Pin)
      10. 9.3.10 Hiccup Mode Overload Protection (LM51551 Only)
      11. 9.3.11 Maximum Duty Cycle Limit and Minimum Input Supply Voltage
      12. 9.3.12 MOSFET Driver (GATE Pin)
      13. 9.3.13 Overvoltage Protection (OVP)
      14. 9.3.14 Thermal Shutdown (TSD)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Standby Mode
      3. 9.4.3 Run Mode
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Custom Design With WEBENCH® Tools
        2. 10.2.2.2 Recommended Components
        3. 10.2.2.3 Inductor Selection (LM)
        4. 10.2.2.4 Output Capacitor (COUT)
        5. 10.2.2.5 Input Capacitor
        6. 10.2.2.6 MOSFET Selection
        7. 10.2.2.7 Diode Selection
        8. 10.2.2.8 Efficiency Estimation
      3. 10.2.3 Application Curve
    3. 10.3 System Examples
  12. 11Power Supply Recommendations
  13. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Examples
  14. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
      2. 13.1.2 Development Support
        1. 13.1.2.1 Custom Design With WEBENCH® Tools
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  15. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

13.6 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.