SNVSBB3A October 2019 – April 2024 LM5163
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
IQ-SHUTDOWN | VIN shutdown current | VEN = 0 V | 3 | 15 | µA | |
IQ-SLEEP1 | VIN sleep current | VEN = 2.5 V, VFB = 1.5 V | 10.5 | 25 | µA | |
IQ-ACTIVE | VIN active current | VEN = 2.5 V | 600 | 880 | µA | |
EN/UVLO | ||||||
VSD-RISING | Shutdown threshold | VEN/UVLO rising | 1.1 | V | ||
VSD-FALLING | Shutdown threshold | VEN/UVLO falling | 0.45 | V | ||
VEN-RISING | Enable threshold | VEN/UVLO rising | 1.45 | 1.5 | 1.55 | V |
VEN-FALLING | Enable threshold | VEN/UVLO falling | 1.35 | 1.4 | 1.44 | V |
FEEDBACK | ||||||
VREF | FB regulation voltage | VFB falling | 1.181 | 1.2 | 1.218 | V |
TIMING | ||||||
tON1 | On-time1 | VVIN = 6 V, RRON = 75 kΩ | 5000 | ns | ||
tON2 | On-time2 | VVIN = 6 V, RRON = 25 kΩ | 1650 | ns | ||
tON3 | On-time3 | VVIN = 12 V, RRON = 75 kΩ | 2550 | ns | ||
tON4 | On-time4 | VVIN = 12 V, RRON = 25 kΩ | 830 | ns | ||
PGOOD | ||||||
VPG-UTH | FB upper threshold for PGOOD high to low | VFB rising | 1.105 | 1.14 | 1.175 | V |
VPG-LTH | FB lower threshold for PGOOD high to low | VFB falling | 1.055 | 1.08 | 1.1 | V |
VPG-HYS | PGOOD upper and lower threshold hysteresis | VFB falling | 60 | mV | ||
RPG | PGOOD pulldown resistance | VFB = 1 V | 30 | Ω | ||
BOOTSTRAP | ||||||
VBST-UV | Gate drive UVLO | VBST rising | 2.7 | 3.4 | V | |
POWER SWITCHES | ||||||
RDSON-HS | High-side MOSFET RDSON | ISW = –100 mA | 0.725 | Ω | ||
RDSON-LS | Low-side MOSFET RDSON | ISW = 100 mA | 0.33 | Ω | ||
SOFT START | ||||||
tSS | Internal soft-start time | 1.75 | 3 | 4.75 | ms | |
CURRENT LIMIT | ||||||
IPEAK1 | Peak current limit threshold (HS) | 0.63 | 0.75 | 0.87 | A | |
IPEAK2 | Peak current limit threshold (LS) | 0.63 | 0.75 | 0.87 | A | |
IDELTA-ILIM | Min of (IPEAK1 or IPEAK2) minus IVALLEY | 100 | mA | |||
IVALLEY | Valley current limit threshold | 0.5 | 0.6 | 0.72 | A | |
THERMAL SHUTDOWN | ||||||
TSD | Thermal shutdown threshold | TJ rising | 175 | °C | ||
TSD-HYS | Thermal shutdown hysteresis | 10 | °C |