SNVSCM3 June   2024 LM5171

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
      1. 6.1.1 Device Configurations (CFG) and I2C Address
      2. 6.1.2 Definition of IC Operation Modes
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Bias Supplies and Voltage Reference (VCC, VDD, and VREF)
      2. 6.3.2  Undervoltage Lockout (UVLO) and Controller Enable or Disable
      3. 6.3.3  High Voltage Inputs (HV1, HV2)
      4. 6.3.4  Current Sense Amplifier
      5. 6.3.5  Control Commands
        1. 6.3.5.1 Channel Enable Commands (EN1, EN2)
        2. 6.3.5.2 Direction Command (DIR1 and DIR2)
        3. 6.3.5.3 Channel Current Setting Commands (ISET1 and ISET2)
      6. 6.3.6  Channel Current Monitor (IMON1, IMON2)
        1. 6.3.6.1 Individual Channel Current Monitor
        2. 6.3.6.2 Multiphase Total Current Monitoring
      7. 6.3.7  Cycle-by-Cycle Peak Current Limit (IPK)
      8. 6.3.8  Inner Current Loop Error Amplifier
      9. 6.3.9  Outer Voltage Loop Error Amplifier
      10. 6.3.10 Soft Start, Diode Emulation, and Forced PWM Control (SS/DEM1 and SS/DEM2)
        1. 6.3.10.1 Soft-Start Control by the SS/DEM Pins
        2. 6.3.10.2 DEM Programming
        3. 6.3.10.3 FPWM Programming and Dynamic FPWM and DEM Change
        4. 6.3.10.4 SS Pin as the Restart Timer
          1. 6.3.10.4.1 Restart Timer in OVP
          2. 6.3.10.4.2 Restart Timer after a DIR Change
      11. 6.3.11 Gate Drive Outputs, Dead Time Programming and Adaptive Dead Time (HO1, HO2, LO1, LO2, DT/SD)
      12. 6.3.12 Emergency Latched Shutdown (DT/SD)
      13. 6.3.13 PWM Comparator
      14. 6.3.14 Oscillator (OSC)
      15. 6.3.15 Synchronization to an External Clock (SYNCI, SYNCO)
      16. 6.3.16 Overvoltage Protection (OVP)
      17. 6.3.17 Multiphase Configurations (SYNCO, OPT)
        1. 6.3.17.1 Multiphase in Star Configuration
        2. 6.3.17.2 Daisy-Chain Configurations for 2, 3, or 4 Phases parallel operations
        3. 6.3.17.3 Daisy-Chain configuration for 6 or 8 phases parallel operation
      18. 6.3.18 Thermal Shutdown
    4. 6.4 Programming
      1. 6.4.1 Dynamic Dead Time Adjustment
      2. 6.4.2 UVLO Programming
    5. 6.5 Registers
      1. 6.5.1 I2C Serial Interface
      2. 6.5.2 I2C Bus Operation
      3. 6.5.3 Clock Stretching
      4. 6.5.4 Data Transfer Formats
      5. 6.5.5 Single READ From a Defined Register Address
      6. 6.5.6 Sequential READ Starting From a Defined Register Address
      7. 6.5.7 Single WRITE to a Defined Register Address
      8. 6.5.8 Sequential WRITE Starting From A Defined Register Address
      9. 6.5.9 REGFIELD Registers
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Small Signal Model
        1. 7.1.1.1 Current Loop Small Signal Model
        2. 7.1.1.2 Current Loop Compensation
        3. 7.1.1.3 Voltage Loop Small Signal Model
        4. 7.1.1.4 Voltage Loop Compensation
    2. 7.2 Typical Application
      1. 7.2.1 60A, Dual-Phase, 48V to 12V Bidirectional Converter
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1  Determining the Duty Cycle
          2. 7.2.1.2.2  Oscillator Programming
          3. 7.2.1.2.3  Power Inductor, RMS and Peak Currents
          4. 7.2.1.2.4  Current Sense (RCS)
          5. 7.2.1.2.5  Current Setting Limits (ISETx)
          6. 7.2.1.2.6  Peak Current Limit
          7. 7.2.1.2.7  Power MOSFETS
          8. 7.2.1.2.8  Bias Supply
          9. 7.2.1.2.9  Boot Strap
          10. 7.2.1.2.10 OVP
          11. 7.2.1.2.11 Dead Time
          12. 7.2.1.2.12 Channel Current Monitor (IMONx)
          13. 7.2.1.2.13 UVLO Pin Usage
          14. 7.2.1.2.14 HVx Pin Configuration
          15. 7.2.1.2.15 Loop Compensation
          16. 7.2.1.2.16 Soft Start
          17. 7.2.1.2.17 PWM to ISET Pins
          18. 7.2.1.2.18 Proper Termination of Unused Pins
        3. 7.2.1.3 Application Curves
          1. 7.2.1.3.1 Efficiency
          2. 7.2.1.3.2 Step Load Response
          3. 7.2.1.3.3 Dual-Channel Interleaving Operation
          4. 7.2.1.3.4 Typical Start Up and Shutdown
          5. 7.2.1.3.5 DEM and FPWM
          6. 7.2.1.3.6 Mode transition between DEM and FPWM
          7. 7.2.1.3.7 ISET Tracking and PreCharge
          8. 7.2.1.3.8 Protections
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information
7.2.1.2.7 Power MOSFETS

The power MOSFETs must be chosen with a VDS rating capable of withstanding the maximum HV-port voltage plus transient spikes (ringing). 100V rated MOSFETs is selected in this application.

When the voltage rating is determined, select the MOSFETs by making tradeoffs between the MOSFET Rds(ON) and total gate charge Qg to balance the conduction and switching losses. For high power applications, parallel MOSFETs to share total power and reduce the dissipation on any individual MOSFET, hence relieving the thermal stress. The conduction losses in each MOSFET is determined by Equation 93.

Equation 93. LM5171

where

  • N is the number of MOSFETs in parallel
  • 1.8 is the approximate temperature coefficient of the Rds(ON) at 125 °C
  • and the total RMS switch current IQ_RMS is approximately determined by Equation 94
Equation 94. LM5171

where

  • Dmax is the maximum duty cycle, either in the buck mode or boost mode.

The switching transient rise and fall times are approximately determined by:

Equation 95. LM5171
Equation 96. LM5171

And the switching losses of each of the paralleled MOSFETs are approximately determined by:

Equation 97. LM5171

where

  • Coss is the output capacitance of the MOSFET.

The power MOSFET usually requires a gate-to-source resistor of 10kΩ to 100kΩ to mitigate the effects of a failed gate drive. When using parallel MOSFETs, a good practice is to use 1 to 2Ω gate resistor for each MOSFET, as shown in Figure 7-9.

LM5171 Paralleled MOSFET Configuration Figure 7-9 Paralleled MOSFET Configuration

If the dead time is not optimal, the body diode of the power synchronous rectifier MOSFET causes losses in reverse recovery. Assuming the reverse recovery charge of the power MOSFET is Qrr, the reverse recovery losses are thus determined by Equation 98:

Equation 98. LM5171

To reduce the reverse recovery losses, an optional Schottky diode can be placed in parallel with the power MOSFETs. The diode must have the same voltage rating as the MOSFET, and it must be placed directly across the MOSFETs drain and source. The peak repetitive forward current rating must be greater than Ipeak, and the continuous forward current rating must be greater than the following Equation 99:

Equation 99. LM5171