SNAS745 June   2017 LM555-MIL

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Direct Replacement for SE555/NE555
      2. 7.3.2 Timing From Microseconds Through Hours
      3. 7.3.3 Operates in Both Astable and Monostable Mode
    4. 7.4 Device Functional Modes
      1. 7.4.1 Monostable Operation
      2. 7.4.2 Astable Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Frequency Divider
        2. 8.2.2.2 Additional Information
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
  • YS|0
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Power Dissipation(3) LM555CM, LM555CN(4) 1180 mW
LM555CMM 613 mW
Soldering Information  PDIP Package Soldering (10 Seconds) 260 °C
Small Outline Packages (SOIC and VSSOP) Vapor Phase (60 Seconds) 215 °C
Infrared (15 Seconds) 220 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(3) For operating at elevated temperatures the device must be derated above 25°C based on a 150°C maximum junction temperature and a thermal resistance of 106°C/W (PDIP), 170°C/W (S0IC-8), and 204°C/W (VSSOP) junction to ambient.
(4) Refer to RETS555X drawing of military LM555H and LM555J versions for specifications.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±500(2) V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) The ESD information listed is for the SOIC package.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply Voltage 18 V
Operating free-air temperature, TA 0 70 °C
Operating junction temperature, TJ 70 °C

6.4 Thermal Information

THERMAL METRIC(1) LM555-MIL UNIT
PDIP SOIC VSSOP
8 PINS 8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 106 170 204 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

(TA = 25°C, VCC = 5 V to 15 V, unless otherwise specified)(1)(2)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supply Voltage 4.5 16 V
Supply Current VCC = 5 V, RL = ∞ 3 6 mA
VCC = 15 V, RL = ∞
(Low State) (3)		 10 15
Timing Error, Monostable
 Initial Accuracy 1 %
 Drift with Temperature RA = 1 k to 100 kΩ, 50 ppm/°C
C = 0.1 μF, (4)
 Accuracy over Temperature 1.5 %
 Drift with Supply 0.1 % V
Timing Error, Astable
 Initial Accuracy 2.25
 Drift with Temperature RA, RB =1 k to 100 kΩ, 150 ppm/°C
C = 0.1 μF, (4)
 Accuracy over Temperature 3.0%
 Drift with Supply 0.30 % /V
Threshold Voltage 0.667 x VCC
Trigger Voltage VCC = 15 V 5 V
VCC = 5 V 1.67 V
Trigger Current 0.5 0.9 μA
Reset Voltage 0.4 0.5 1 V
Reset Current 0.1 0.4 mA
Threshold Current  (5) 0.1 0.25 μA
Control Voltage Level VCC = 15 V 9 10 11 V
VCC = 5 V 2.6 3.33 4
Pin 7 Leakage Output High 1 100 nA
Pin 7 Sat (6)
 Output Low VCC = 15 V, I7 = 15 mA 180 mV
 Output Low VCC = 4.5 V, I7 = 4.5 mA 80 200 mV
Output Voltage Drop (Low) VCC = 15 V
ISINK = 10 mA 0.1 0.25 V
ISINK = 50 mA 0.4 0.75 V
ISINK = 100 mA 2 2.5 V
ISINK = 200 mA 2.5 V
VCC = 5 V
ISINK = 8 mA V
ISINK = 5 mA 0.25 0.35 V
Output Voltage Drop (High) ISOURCE = 200 mA, VCC = 15 V 12.5 V
ISOURCE = 100 mA, VCC = 15 V 12.75 13.3 V
VCC = 5 V 2.75 3.3 V
Rise Time of Output 100 ns
Fall Time of Output 100 ns
(1) All voltages are measured with respect to the ground pin, unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which ensures specific performance limits. This assumes that the device is within the Recommended Operating Conditions. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication of device performance.
(3) Supply current when output high typically 1 mA less at VCC = 5 V.
(4) Tested at VCC = 5 V and VCC = 15 V.
(5) This will determine the maximum value of RA + RB for 15 V operation. The maximum total (RA + RB) is 20 MΩ.
(6) No protection against excessive pin 7 current is necessary providing the package dissipation rating will not be exceeded.

6.6 Typical Characteristics

LM555-MIL 00785104.png
Figure 1. Minimum Pulse Width Required For Triggering
LM555-MIL 00785120.png
Figure 3. High Output Voltage vs. Output Source Current
LM555-MIL 00785122.png
Figure 5. Low Output Voltage vs. Output Sink Current
LM555-MIL 00785124.png
Figure 7. Output Propagation Delay vs. Voltage Level of Trigger Pulse
LM555-MIL 00785126.png
Figure 9. Discharge Transistor (Pin 7) Voltage vs. Sink Current
LM555-MIL 00785119.png
Figure 2. Supply Current vs. Supply Voltage
LM555-MIL 00785121.png
Figure 4. Low Output Voltage vs. Output Sink Current
LM555-MIL 00785123.png
Figure 6. Low Output Voltage vs. Output Sink Current
LM555-MIL 00785125.png
Figure 8. Output Propagation Delay vs. Voltage Level of Trigger Pulse
LM555-MIL 00785127.png
Figure 10. Discharge Transistor (Pin 7) Voltage vs. Sink Current