SNVSBE4C March   2020  – June 2021 LM61440-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Characteristics
    7. 8.7 Systems Characteristics
    8. 8.8 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  EN/SYNC Uses for Enable and VIN UVLO
      2. 9.3.2  EN/SYNC Pin Uses for Synchronization
      3. 9.3.3  Clock Locking
      4. 9.3.4  Adjustable Switching Frequency
      5. 9.3.5  PGOOD Output Operation
      6. 9.3.6  Internal LDO, VCC UVLO, and BIAS Input
      7. 9.3.7  Bootstrap Voltage and VCBOOT-UVLO (CBOOT Pin)
      8. 9.3.8  Adjustable SW Node Slew Rate
      9. 9.3.9  Spread Spectrum
      10. 9.3.10 Soft Start and Recovery From Dropout
      11. 9.3.11 Output Voltage Setting
      12. 9.3.12 Overcurrent and Short Circuit Protection
      13. 9.3.13 Thermal Shutdown
      14. 9.3.14 Input Supply Current
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Standby Mode
      3. 9.4.3 Active Mode
        1. 9.4.3.1 CCM Mode
        2. 9.4.3.2 Auto Mode - Light Load Operation
          1. 9.4.3.2.1 Diode Emulation
          2. 9.4.3.2.2 Frequency Reduction
        3. 9.4.3.3 FPWM Mode - Light Load Operation
        4. 9.4.3.4 Minimum On-time (High Input Voltage) Operation
        5. 9.4.3.5 Dropout
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1  Choosing the Switching Frequency
        2. 10.2.2.2  Setting the Output Voltage
        3. 10.2.2.3  Inductor Selection
        4. 10.2.2.4  Output Capacitor Selection
        5. 10.2.2.5  Input Capacitor Selection
        6. 10.2.2.6  BOOT Capacitor
        7. 10.2.2.7  BOOT Resistor
        8. 10.2.2.8  VCC
        9. 10.2.2.9  BIAS
        10. 10.2.2.10 CFF and RFF Selection
        11. 10.2.2.11 External UVLO
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Ground and Thermal Considerations
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1)  
Device HBM Classification Level 2		 ±2000 V
Charged device model (CDM), per AEC Q100-011
Device CDM Classification Level C5		 ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.