SNOS792E May   1999  – December 2024 LM6172

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics ±15V
    6. 5.6 Electrical Characteristics ±5V
    7. 5.7 Typical Characteristics: D (SOIC, 8) Package
    8. 5.8 Typical Characteristics: P (PDIP, 8) Package
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Slew Rate
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Circuit Operation
      2. 7.1.2 Reduce Settling Time
      3. 7.1.3 Drive Capacitive Loads
      4. 7.1.4 Compensation for Input Capacitance
      5. 7.1.5 Termination
    2. 7.2 Typical Application
      1. 7.2.1 Application Circuits
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Power Supply Bypassing
      2. 7.3.2 Power Dissipation
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Printed Circuit Boards and High-Speed Op Amps
        2. 7.4.1.2 Using Probes
        3. 7.4.1.3 Components Selection and Feedback Resistor
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • P|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.4 Electrostatic Discharge Caution

LM6172 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.