SNOS792E May   1999  – December 2024 LM6172

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics ±15V
    6. 5.6 Electrical Characteristics ±5V
    7. 5.7 Typical Characteristics: D (SOIC, 8) Package
    8. 5.8 Typical Characteristics: P (PDIP, 8) Package
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Slew Rate
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Circuit Operation
      2. 7.1.2 Reduce Settling Time
      3. 7.1.3 Drive Capacitive Loads
      4. 7.1.4 Compensation for Input Capacitance
      5. 7.1.5 Termination
    2. 7.2 Typical Application
      1. 7.2.1 Application Circuits
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Power Supply Bypassing
      2. 7.3.2 Power Dissipation
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Printed Circuit Boards and High-Speed Op Amps
        2. 7.4.1.2 Using Probes
        3. 7.4.1.3 Components Selection and Feedback Resistor
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • P|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.2 Power Dissipation

The maximum power allowed to dissipate in a device is defined as:

Equation 2. PD = (TJ(max) − TA) / θJA

where

  • PD is the power dissipation in a device
  • TJ(max) is the maximum junction temperature
  • TA is the ambient temperature
  • θJA is the thermal resistance of a particular package

For example, for the LM6172 in a SOIC-8 package, the maximum power dissipation at 25°C ambient temperature is 726mW.

Thermal resistance, θJA, depends on parameters such as die size, package size, and package material. The smaller the die size and package, the higher the θJA. The 8-pin PDIP package has lower thermal resistance (108°C/W) than that of the 8-pin SOIC (172°C/W). Therefore, for higher dissipation capability, use an 8-pin PDIP.

The total power dissipated in a device can also be calculated as:

Equation 3. PD = PQ + PL

where

  • PQ is quiescent power dissipated in a device with no load connected at the output.
  • PL is power dissipated in the device with a load connected at the output, not power dissipated by the load.

Furthermore,

  • PQ = supply current × total supply voltage with no load
  • PL = output current × (voltage difference between supply voltage and output voltage of the same supply)

For example, use Equation 3 to solve the total power dissipated by the LM6172 with VS = ±15V and both channels swinging output voltage of 10V into 1kΩ:

  • = 2[(2.3mA)(30V)] + 2[(10mA)(15V − 10V)]
  • = 138mW + 100mW
  • = 238mW