SNVSB55H February 2019 – June 2024 LM63615-Q1 , LM63625-Q1
PRODUCTION DATA
Figure 8-1 shows a typical application circuit for the LM636x5D-Q1. This device is designed to function over a wide range of external
components and system parameters. However, the internal compensation is optimized for a
certain range of external inductance and output capacitance. As a quick start guide, see Table 8-1 and
Table 8-2 for typical component values.
ƒSW (kHz) | VOUT | L (µH)(1) | TYPICAL(2) COUT | MINIMUM(2) COUT | VSEL | RT | CIN | CBOOT | CVCC |
---|---|---|---|---|---|---|---|---|---|
400 | 3.3 | 10 | 4 × 10 µF | 2 × 10 µF | AGND | VCC | 4.7 µF + 220 nF | 220 nF | 1 µF |
2100 | 3.3 | 4.7 | 2 × 10 µF | 1 × 10 µF | AGND | AGND | 4.7 µF + 220 nF | 220 nF | 1 µF |
400 | 5 | 10 | 4 × 10 µF | 2 × 10 µF | VCC | VCC | 4.7 µF + 220 nF | 220 nF | 1 µF |
2100 | 5 | 4.7 | 2 × 10 µF | 1 × 10 µF | VCC | AGND | 4.7 µF + 220 nF | 220 nF | 1 µF |
ƒSW (kHz) | VOUT | L (µH)(1) | TYPICAL(2) COUT | MINIMUM(2) COUT | VSEL | RT | CIN | CBOOT | CVCC |
---|---|---|---|---|---|---|---|---|---|
400 | 3.3 | 6.8 | 3 × 22 µF | 2 × 22 µF | AGND | VCC | 4.7 µF + 220 nF | 220 nF | 1 µF |
2100 | 3.3 | 2.2 | 2 × 22 µF | 1 × 22 µF | AGND | AGND | 4.7 µF + 220 nF | 220 nF | 1 µF |
400 | 5 | 6.8 | 3 × 22 µF | 2 × 22 µF | VCC | VCC | 4.7 µF + 220 nF | 220 nF | 1 µF |
2100 | 5 | 2.2 | 2 × 22 µF | 1 × 22 µF | VCC | AGND | 4.7 µF + 220 nF | 220 nF | 1 µF |