SLVSGD6A November   2021  – March 2022 LM66100-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Reverse Polarity Protection (RPP)
      2. 8.3.2 Always-ON Reverse Current Blocking (RCB)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Dual Ideal Diode ORing
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Dual Ideal Diode ORing for Continuous Output Power
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Application Curves
      3. 9.2.3 ORing with Discrete MOSFET
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

Typical values are at 25°C with an input voltage of 3.6V. Maximum and minimum values are across the entire operating voltage range, from 1.5V to 5.5V. (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input Supply (VIN)
ISD,VIN VIN Shutdown Current VOUT = VIN
VCE > VIN + 80 mV
IOUT = 0 A (VOUT = open)		 25°C 0.12 0.3 µA
–40°C to 125°C 0.3 µA
IQ,VIN VIN Quiescent Current VOUT = VIN
VCE < VIN – 250 mV
IOUT = 0 A (VOUT = open)		 25°C 0.15 0.3 µA
–40°C to 125°C 0.3 µA
IOUT, OFF OUT to IN Leakage Current
(Current out of VIN)		 VOUT – VIN ≤ 5.5 V
VCE > VIN + 80 mV		 25°C 0.2 0.5 µA
–40°C to 85°C 2.7 µA
–40°C to 125°C 8 µA
VOUT – VIN ≤ 4.5 V
VCE > VIN + 80 mV		 –40°C to 85°C 1.7 µA
–40°C to 125°C 5.1 µA
VOUT – VIN ≤ 1.0 V
VCE > VIN + 80 mV		 –40°C to 85°C 0.7 µA
–40°C to 125°C 2.1 µA
ON-Resistance (RON)
RON ON-State Resistance  IOUT = –200 mA VIN = 5 V 25°C 79 95 mΩ
–40°C to 85°C 110
–40°C to 125°C 120
RON ON-State Resistance  IOUT = –200 mA VIN = 3.6 V 25°C 91 110 mΩ
–40°C to 85°C 125
–40°C to 125°C 140
RON ON-State Resistance  IOUT = –200 mA VIN = 1.8 V 25°C 141 180 mΩ
–40°C to 85°C 210
–40°C to 125°C 230
Comparator Chip Enable (CE)
VON Turn ON Threshold VCE – VIN –40°C to 125°C –250 –150 –80 mV
VOFF Turn OFF Threshold VCE – VIN –40°C to 125°C 0 35 80 mV
ICE CE Pin Leakage Current VCE < VIN – 250 mV –40°C to 125°C 0 160 300 nA
ICE CE Pin Leakage Current VCE > VIN + 80 mV –40°C to 125°C 0 400 610 nA
Reverse Current Blocking (RCB) and Body Diode Characteristics
IRCB Reverse Activation Current VCE = VOUT –40°C to 125°C 0.5 1 A
VFWD Body Diode Forward Voltage IOUT = 10 mA
VCE > VIN + 80 mV		 –40°C to 125°C 0.1 0.5 1.1 V
Status Indication (ST)
VOL, ST Output Low Voltage IST = 1 mA –40°C to 125°C 0.1 V
tST Status Delay Time VCE transitions from low to high –40°C to 125°C 1 µs
IST ST Pin Leakage Current VCE < VIN – 250 mV –40°C to 125°C –20 20 nA