SLVSEZ8A March   2019  – June 2019 LM66100

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Typical Application
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Reverse Polarity Protection (RPP)
      2. 8.3.2 Always-ON Reverse Current Blocking (RCB)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Dual Ideal Diode ORing
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Dual Ideal Diode ORing for Continuous Output Power
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Application Curves
      3. 9.2.3 ORing with Discrete MOSFET
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.3.1 Design Requirements

Similar to the Dual Ideal Diode circuit, the Status Output can also be used to control a discrete P-Channel MOSFET. This can be useful in applications that want to minimize the leakage current on the secondary supply, such as battery backup systems. This configuration can also be used on systems that require a lower RON on the secondary rail, useful for higher current applications.

When the Ideal Diode path is enabled, the status will be Hi-Z and pull up the gate of the external PFET to keep it off. When the main supply (VIN1) drops such that backup supply (VIN2) is higher than VIN1, the ideal diode will be disabled and pull the ST pin and the PFET gate low to turn on the discrete MOSFET path.