SLVSEZ8A
March 2019 – June 2019
LM66100
PRODUCTION DATA.
1
Features
2
Applications
3
Description
Typical Application
4
Revision History
5
Pin Configuration and Functions
Pin Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Typical Characteristics
7
Parameter Measurement Information
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Reverse Polarity Protection (RPP)
8.3.2
Always-ON Reverse Current Blocking (RCB)
8.4
Device Functional Modes
9
Application and Implementation
9.1
Application Information
9.2
Typical Applications
9.2.1
Dual Ideal Diode ORing
9.2.1.1
Design Requirements
9.2.1.2
Detailed Design Procedure
9.2.1.3
Application Curves
9.2.2
Dual Ideal Diode ORing for Continuous Output Power
9.2.2.1
Design Requirements
9.2.2.2
Application Curves
9.2.3
ORing with Discrete MOSFET
9.2.3.1
Design Requirements
9.2.3.2
Application Curves
10
Power Supply Recommendations
11
Layout
11.1
Layout Guidelines
11.2
Layout Example
12
Device and Documentation Support
12.1
Receiving Notification of Documentation Updates
12.2
Community Resources
12.3
Trademarks
12.4
Electrostatic Discharge Caution
12.5
Glossary
13
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
DCK|6
MPDS114E
Thermal pad, mechanical data (Package|Pins)
Orderable Information
slvsez8a_oa
slvsez8a_pm
6.2
ESD Ratings
VALUE
UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, allpins
(1)
±2000
V
Charged device model (CDM), per JEDEC specificationJESD22-C101, all pins
(2)
±500