SLVSFD0 September   2019 LM74202-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      ISO16750-2 Load Dump Pulse 5b Performance at 12 V
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1      Absolute Maximum Ratings
    2. 6.2      ESD Ratings
    3. 6.3      Recommended Operating Conditions
    4. Table 1. Thermal Information
    5. 6.4      Electrical Characteristics
    6. 6.5      Timing Requirements
    7. 6.6      Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO)
      2. 8.3.2 Overvoltage Protection (OVP)
      3. 8.3.3 Reverse Battery Protection
      4. 8.3.4 Hot Plug-In and In-Rush Current Control
      5. 8.3.5 Overload and Short Circuit Protection
        1. 8.3.5.1 Overload Protection
          1. 8.3.5.1.1 Active Current Limiting
          2. 8.3.5.1.2 Electronic Circuit Breaker with Overload Timeout, MODE = OPEN
        2. 8.3.5.2 Short Circuit Protection
          1. 8.3.5.2.1 Start-Up With Short-Circuit On Output
        3. 8.3.5.3 FAULT Response
          1. 8.3.5.3.1 Look Ahead Overload Current Fault Indicator
        4. 8.3.5.4 Current Monitoring
        5. 8.3.5.5 IN, OUT, RTN and GND Pins
        6. 8.3.5.6 Thermal Shutdown
        7. 8.3.5.7 Low Current Shutdown Control (SHDN)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Step by Step Design Procedure
        2. 9.2.2.2 Setting Undervoltage Lockout and Overvoltage Set Point for Operating Voltage Range
        3. 9.2.2.3 Programming the Current-Limit Threshold—R(ILIM) Selection
        4. 9.2.2.4 Programming Current Monitoring Resistor—RIMON
        5. 9.2.2.5 Limiting the Inrush Current
          1. 9.2.2.5.1 Selection of Input TVS for Transient Protection
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Electrical Characteristics

–40°C ≤ TA = TJ ≤ +125°C, V(IN) = 12 V, V(SHDN) = 2 V, R(ILIM) = 120 kΩ, IMON = FLT = OPEN, C(IN) = 0.1 μF, C(OUT) = 1 μF, C(dVdT) = OPEN.
(All voltages referenced to GND, (unless otherwise noted))
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE
V(IN) Operating input voltage 4.2 40 V
VPORR Internal POR Threshold, Rising 3.89 4 4.14 V
VPORHys Internal POR Hysteresis 55 275 305 mV
IQON Supply Current with device enabled VIN = 12V
Enabled: V(SHDN) = 2 V,		 285 390 µA
IQOFF Supply Current with device disabled VIN = 12V, V(SHDN) = 0 V 16 32 µA
IVINR Reverse Input supply current V(IN) = -40 V, V(OUT) = 0 V 50 µA
UNDERVOLTAGE LOCKOUT (UVLO) INPUT
V(UVLOR) UVLO Threshold Voltage, Rising 1.175 1.19 1.25 V
V(UVLOR) UVLO Threshold Voltage, Falling 1.08 1.1 1.126 V
I(UVLO) UVLO Input leakage current 0 V ≤ V(UVLO) ≤ 40 V –100 100 nA
LOW IQ SHUTDOWN (SHDNb) INPUT
V(SHDN) Output voltage I(SHDN) = 0.1µA 2 2.7 3.4 V
V(SHUTF) SHDN Threshold Voltage for Low IQ Shutdown, Falling 0.45 V
V(SHUTFR) SHDN Threshold, Rising 0.96 V
I(SHDN) Input current V(SHDN) = 0.4 V -10 µA
OVER VOLTAGE PROTECTION (OVP) INPUT
V(SEL_OVP) Factory Set OV Clamp Select Threshold 180 200 240 mV
V(OVPR) Over-Voltage Threshold Voltage, Rising 1.175 1.19 1.225 V
V(OVPF) Over-Voltage Threshold Voltage, Falling 1.085 1.125
I(OVP) OVP Input Leakage Current 0V ≤ V(OVP) ≤ 4V –100 0 100 nA
OUTPUT RAMP CONTROL (dVdT)
I(dVdT) dVdT Charging Current V(dVdT) = 0 V 4 4.7 5.82 µA
R(dVdT) dVdT Discharging Resistance SHDN = 0 V, with I(dVdT) = 10mA sinking 28 Ω
GAIN(dVdT) dVdT to OUT Gain △V(OUT) /△V(dVdT) 23.75 24.63 25.5 V/V
CURRENT LIMIT PROGRAMMING (ILIM)
V(ILIM) ILIM Bias Voltage 1 V
I(OL) Overload Current Limit R(ILIM) = 120 kΩ, V(IN)-V(OUT)=1V 0.085 0.1 0.115 A
R(ILIM) = 12 kΩ, V(IN)-V(OUT)=1V 0.95 1 1.05
R(ILIM) = 8 kΩ, V(IN)-V(OUT)=1V 1.425 1.5 1.575
R(ILIM) = 5.36 kΩ, V(IN)-V(OUT)=1V 2.11 2.23 2.35
I(OL_R-OPEN) R(ILIM)= OPEN, Open Resistor Current Limit 0.055
I(OL_R-SHORT) R(ILIM)= SHORT, Shorted Resistor Current Limit 0.095
I(CB) Circuit breaker detection threshold R(ILIM) = 120 kΩ, MODE = open 0.045 0.073 0.11 A
I(CB) Circuit breaker detection threshold R(ILIM) = 5.36 kΩ, MODE = open 2 2.21 2.4 A
I(SCL) Short-Circuit Current Limit R(ILIM) = 120 kΩ, V(IN)-V(OUT)=5V 0.08 0.1 0.12 A
R(ILIM) = 8 kΩ, V(IN)-V(OUT)=5V 1.425 1.5 1.575 A
R(ILIM) = 5.36 kΩ, V(IN)-V(OUT)=5V 2.11 2.23 2.35 A
I(FASTRIP) Fast-trip comparator threshold 1.87 x I(OL) + 0.015 A
CURRENT MONITOR OUTPUT (IMON)
GAIN(IMON) Gain Factor I(IMON):I(OUT) 0.1A ≤ I(OUT) ≤ 2A 72 78.28 85 µA/A
PASS FET OUTPUT (OUT)
RON IN to OUT Total ON Resistance 0.1A ≤ I(OUT) ≤ 2A,TJ = 25°C 130 150 168 mΩ
0.1A ≤ I(OUT) ≤ 2A, -40°C ≤ TJ ≤ 85°C 150 220
0.1A ≤ I(OUT) ≤ 2A, -40°C ≤ TJ ≤ 125°C 78 150 265
Ilkg(OUT) OUT Leakage Current in Off State V(IN) = 40 V, V(SHDN)= 0 V, V(OUT) = 0 V, Sourcing 12 µA
Ilkg(OUT) OUT Leakage Current in Off State V(IN) = 0 V, V(SHDN)= 0 V, V(OUT) = 24 V, Sinking -11 11 µA
V(IN) = -40 V, V(SHDN)= 0 V, V(OUT) = 0 V, Sinking -40 -18 50
V(REVTH) V(IN)-V(OUT) Threshold for Reverse Protection Comparator, Falling -16.2 -10 -5 mV
V(FWDTH) V(IN)-V(OUT) Threshold for Reverse Protection Comparator, Rising 85 96 110 mV
FAULT FLAG (FLTb): ACTIVE LOW
R(FLT) FLT Pull-Down Resistance V(OVP) = 2 V, I(FLT) = 5mA sinking 350 Ω
I(FLT) FLT Input Leakage Current 0 V ≤ V(FLT) ≤ 40 V –200 200 nA
THERMAL SHUT DOWN (TSD)
T(TSD) TSD Threshold, rising 157 °C
TSD hysteresis 10.1 °C
MODE
MODE_SEL Thermal fault mode selection MODE = 402 kΩ to RTN Current limiting with latch
MODE = Open Circuit breaker mode with auto-retry
MODE = Short to RTN Current limiting with auto-retry