SNOSD87A July   2021  – February 2022 LM74501-Q1

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Voltage
      2. 8.3.2 Charge Pump
      3. 8.3.3 Enable
      4. 8.3.4 Gate Driver
      5. 8.3.5 SW (Battery Voltage Monitoring)
      6. 8.3.6 Gate Discharge Timer
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Full Conduction Mode
      3. 8.4.3 VDS Clamp
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Reverse Battery Protection
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Considerations
        2. 9.2.2.2 MOSFET Selection
        3. 9.2.2.3 Gate Discharge Timer Capacitor Selection (CT)
        4. 9.2.2.4 Charge Pump VCAP, Input and Output Capacitance
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Layout Guidelines

  • Connect SOURCE, GATE, and DRAIN pins of LM74501-Q1 close to the MOSFET's SOURCE, GATE, and DRAIN pins.
  • Use thick traces for source and drain of the MOSFET to minimize resistive losses because the high current path of for this solution is through the MOSFET.
  • Place the input capacitor close to the SOURCE pin to Ground (GND) to minimize long ground loop.
  • Keep the charge pump capacitor across VCAP and SOURCE pins away from the MOSFET to lower the thermal effects on the capacitance value.
  • Avoid excessively thin and long trace for the gate pin connection. The Gate pin of the LM74501-Q1 must be connected to the MOSFET gate with short trace.
  • Use of series gate resistor (typical 10 Ω) can help with better EMI performance.