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  • LM74700-Q1 Low IQ Reverse Battery Protection Ideal Diode Controller

    • SNOSD17G October   2017  – December 2020 LM74700-Q1

      PRODMIX  

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  • LM74700-Q1 Low IQ Reverse Battery Protection Ideal Diode Controller
  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  7. 7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input Voltage
      2. 9.3.2 Charge Pump
      3. 9.3.3 Gate Driver
      4. 9.3.4 Enable
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Conduction Mode
        1. 9.4.2.1 Regulated Conduction Mode
        2. 9.4.2.2 Full Conduction Mode
        3. 9.4.2.3 Reverse Current Protection Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Typical Application
        1. 10.1.1.1 Design Requirements
        2. 10.1.1.2 Detailed Design Procedure
          1. 10.1.1.2.1 Design Considerations
          2. 10.1.1.2.2 MOSFET Selection
          3. 10.1.1.2.3 Charge Pump VCAP, input and output capacitance
        3. 10.1.1.3 Selection of TVS Diodes for 12-V Battery Protection Applications
        4. 10.1.1.4 Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
        5. 10.1.1.5 Application Curves
    2. 10.2 OR-ing Application Configuration
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Support Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information
  15. IMPORTANT NOTICE

Package Options

Mechanical Data (Package|Pins)
  • DDF|8
    • MPDS569D
  • DBV|6
    • MPDS026Q
Thermal pad, mechanical data (Package|Pins)
Orderable Information
  • snosd17g_oa
  • snosd17g_pm
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    • Full reading width
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DATA SHEET

LM74700-Q1 Low IQ Reverse Battery Protection Ideal Diode Controller

1 Features

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1:
      –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • Functional Safety-Capable
    • Documentation available to aid functional safety system design
  • 3.2-V to 65-V input range (3.9-V start up)
  • –65-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20-mV ANODE to CATHODE forward voltage drop regulation
  • Enable pin feature
  • 1-µA shutdown current (EN=Low)
  • 80-µA operating quiescent current (EN=High)
  • 2.3-A peak gate turnoff current
  • Fast response to reverse current blocking:
    < 0.75 µs
  • Meets automotive ISO7637 transient requirements with a suitable TVS Diode
  • Available in 6-pin and 8-pin SOT-23 Package 2.90 mm × 1.60 mm

2 Applications

  • Automotive ADAS systems - camera
  • Automotive infotainment systems - digital cluster, head unit
  • Industrial factory automation - PLC
  • Enterprise power supplies
  • Active ORing for redundant power

3 Description

The LM74700-Q1 is an automotive AEC Q100 qualified ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection with a 20-mV forward voltage drop. The wide supply input range of 3.2 V to 65 V allows control of many popular DC bus voltages such as 12-V, 24-V and 48-V automotive battery systems. The 3.2-V input voltage support is particularly well suited for severe cold crank requirements in automotive systems. The device can withstand and protect the loads from negative supply voltages down to –65 V.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to Reverse Current Blocking makes the device suitable for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions.

The LM74700-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. The high voltage rating of LM74700-Q1 helps to simplify the system designs for automotive ISO7637 protection. With the enable pin low, the controller is off and draws approximately 1 µA of current.

Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
LM74700-Q1 SOT-23 (6) 2.90 mm × 1.60 mm
LM74700-Q1 SOT-23 (8) 2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at the end of the data sheet.
GUID-B11A4FBC-25A3-411E-BA38-375830E4C81C-low.gifTypical Application Schematic
GUID-BBBE2269-EFD5-4209-B200-4168FAB76CC5-low.gifReverse Current Blocking During Input Short

4 Revision History

Changes from Revision F (December 2019) to Revision G (December 2020)

  • Updated the numbering format for tables, figures and cross-references throughout the documentGo
  • Added DDF (SOT-23) package option to data sheetGo
  • Relaxed VCAP specs in Electrical Characteristics tableGo

Changes from Revision () to Revision ()

    Changes from Revision E (February 2019) to Revision F (December 2019)

    • Added the Functional safety capable link to the Section 1 sectionGo

    Changes from Revision D (January 2019) to Revision E (February 2019)

    • Changed from Advance Information to Production Data Go

    Changes from Revision C (November 2018) to Revision D (January 2019)

    • Added Section 7 section Go
    • Added Section 8 section Go
    • Deleted Application Limitations section Go
    • Added Section 10.2 section Go

    Changes from Revision B (October 2018) to Revision C (November 2018)

    • Added footnotes to the Absolute Maximum Ratings and Recommended Operating Conditions tables in the Section 6 sectionGo

    Changes from Revision A (March 2018) to Revision B (October 2018)

    • Changes made in the Section 6 and Application Limitations sectionsGo

    Changes from Revision * (October 2017) to Revision A (March 2018)

    • Multiple changes made throughout Data SheetGo

    5 Pin Configuration and Functions

    GUID-4CD96EA3-7034-46CD-9A6F-18CED3C31537-low.gifFigure 5-1 DBV Package6-Pin SOT-23Top View
    Table 5-1 Pin Functions
    PINI/O(1)DESCRIPTION
    NO.NAME
    1VCAPOCharge pump output. Connect to external charge pump capacitor
    2GNDGGround pin
    3ENIEnable pin. Can be connected to ANODE for always ON operation
    4CATHODEICathode of the diode. Connect to the drain of the external N-channel MOSFET
    5GATEOGate drive output. Connect to gate of the external N-channel MOSFET
    6ANODEIAnode of the diode and input power. Connect to the source of the external N-channel MOSFET
    (1) I = Input, O = Output, G = GND
    GUID-20201209-CA0I-ZWFS-GSZR-SL0BGP72L1DG-low.gifFigure 5-2 DDF Package8-Pin SOT-23Top View
    Table 5-2 Pin Functions
    PINI/O(1)DESCRIPTION
    NO.NAME
    1ENIEnable pin. Can be connected to ANODE for always ON operation
    2GNDGGround pin
    3N.CNo connection
    4VCAPOCharge pump output. Connect to external charge pump capacitor
    5ANODEIAnode of the diode and input power. Connect to the source of the external N-channel MOSFET
    6GATEOGate drive output. Connect to gate of the external N-channel MOSFET
    7N.CNo connection
    8CATHODEICathode of the diode. Connect to the drain of the external N-channel MOSFET
    (1) I = Input, O = Output, G = GND

     
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