SNOSD17G October   2017  – December 2020 LM74700-Q1

PRODMIX  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  7. 7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input Voltage
      2. 9.3.2 Charge Pump
      3. 9.3.3 Gate Driver
      4. 9.3.4 Enable
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Conduction Mode
        1. 9.4.2.1 Regulated Conduction Mode
        2. 9.4.2.2 Full Conduction Mode
        3. 9.4.2.3 Reverse Current Protection Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Typical Application
        1. 10.1.1.1 Design Requirements
        2. 10.1.1.2 Detailed Design Procedure
          1. 10.1.1.2.1 Design Considerations
          2. 10.1.1.2.2 MOSFET Selection
          3. 10.1.1.2.3 Charge Pump VCAP, input and output capacitance
        3. 10.1.1.3 Selection of TVS Diodes for 12-V Battery Protection Applications
        4. 10.1.1.4 Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
        5. 10.1.1.5 Application Curves
    2. 10.2 OR-ing Application Configuration
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Support Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

TJ = –40°C to +125°C; typical values at TJ = 25°C, V(ANODE) = 12 V, C(VCAP) = 0.1 µF, V(EN) = 3.3 V, over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VANODE SUPPLY VOLTAGE
V(ANODE)Operating input voltage460V
V(ANODE POR)VANODE POR Rising threshold3.9V
VANODE POR Falling threshold2.22.83.1V
V(ANODE POR(Hys))VANODE POR Hysteresis0.440.67V
I(SHDN)Shutdown Supply CurrentV(EN) = 0 V0.91.5µA
I(Q)Operating Quiescent Current80130µA
ENABLE INPUT
V(EN_IL)Enable input low threshold0.50.91.22V
V(EN_IH)Enable input high threshold1.0622.6
V(EN_Hys)Enable Hysteresis0.521.35V
I(EN)Enable sink currentV(EN) = 12 V35µA
VANODE to VCATHODE
V(AK REG)Regulated Forward V(AK) Threshold132029mV
V(AK)V(AK) threshold for full conduction mode345057mV
V(AK REV)V(AK) threshold for reverse current blocking–17–11–2mV
GmRegulation Error AMP Transconductance(1)120018003100µA/V
GATE DRIVE
I(GATE)Peak source currentV(ANODE) – V(CATHODE) = 100 mV, 
V(GATE) – V(ANODE) = 5 V		311mA
Peak sink currentV(ANODE) – V(CATHODE) = –20 mV, 
V(GATE) – V(ANODE) = 5 V		2370mA
Regulation max sink currentV(ANODE) – V(CATHODE) = 0 V, 
V(GATE) – V(ANODE) = 5 V		626µA
RDSONdischarge switch RDSONV(ANODE) – V(CATHODE) = –20 mV, 
V(GATE) – V(ANODE) = 100 mV		0.42Ω
CHARGE PUMP
I(VCAP)Charge Pump source current (Charge pump on)V(VCAP) – V(ANODE) = 7 V162300600µA
Charge Pump sink current (Charge pump off)V(VCAP) – V(ANODE) = 14 V510µA
V(VCAP) – V(ANODE)Charge pump voltage at V(ANODE) = 3.2 VI(VCAP) ≤ 30 µA8V
Charge pump turn on voltage10.812.112.9V
Charge pump turn off voltage

11.6

1313.9V
Charge Pump Enable comparator Hysteresis0.540.91.36V
V(VCAP UVLO)V(VCAP) – V(ANODE) UV release at rising edgeV(ANODE) – V(CATHODE) = 100 mV5.86.67.7V
V(VCAP) – V(ANODE) UV threshold at falling edgeV(ANODE) – V(CATHODE) = 100 mV5.115.686V
CATHODE
I(CATHODE)CATHODE sink currentV(ANODE) = 12 V, V(ANODE) – V(CATHODE) = –100 mV1.72µA
V(ANODE) – V(CATHODE) = –100 mV1.22.2µA
V(ANODE) = –12 V, V(CATHODE) = 12 V1.252.06µA
(1) Parameter guaranteed by design and characterization