SNOSDF5 September   2023 LM74700D-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  8. 7 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input Voltage
      2. 9.3.2 Charge Pump
      3. 9.3.3 Gate Driver
      4. 9.3.4 Enable
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Conduction Mode
        1. 9.4.2.1 Regulated Conduction Mode
        2. 9.4.2.2 Full Conduction Mode
        3. 9.4.2.3 Reverse Current Protection Mode
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Design Considerations
        2. 10.2.2.2 MOSFET Selection
        3. 10.2.2.3 Charge Pump VCAP, Input and Output Capacitance
      3. 10.2.3 Selection of TVS Diodes for 12-V Battery Protection Applications
      4. 10.2.4 Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
      5. 10.2.5 Application Curves
      6. 10.2.6 OR-ing Application Configuration
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1:
      –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V start-up)
  • –65-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20-mV ANODE to CATHODE forward voltage drop regulation
  • Enable pin feature
  • 1-µA shutdown current (EN=Low)
  • 80-µA operating quiescent current (EN=High)
  • 2.3-A peak gate turn-off current
  • < 0.75-µs response to reverse current blocking
  • Meets automotive ISO7637 transient requirements with a suitable TVS Diode
  • Available in an 8-pin SOIC package