SNOSDB8A June   2021  – December 2021 LM74701-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Voltage
      2. 8.3.2 Charge Pump
      3. 8.3.3 Gate Driver
      4. 8.3.4 Enable
      5. 8.3.5 Battery Voltage Monitoring (SW)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Conduction Mode
        1. 8.4.2.1 Regulated Conduction Mode
        2. 8.4.2.2 Full Conduction Mode
        3. 8.4.2.3 VDS Clamp Mode
      3. 8.4.3 Reverse Current Protection Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Considerations
        2. 9.2.2.2 MOSFET Selection
        3. 9.2.2.3 Charge Pump VCAP (CVCAP) and Input Capacitance (CIN)
        4. 9.2.2.4 Output Capacitance (COUT)
      3. 9.2.3 Application Curves
    3. 9.3 What to Do and What Not to Do
    4. 9.4 OR-ing Application Configuration
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

TJ = –40°C to +125°C; typical values at TJ = 25°C, V(ANODE) = 12 V, C(VCAP) = 0.1 µF, V(EN) = 3.3 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VANODE SUPPLY VOLTAGE
VCLAMP V(CATHODE–ANODE) clamp voltage 34 43 V
V(ANODE) Operating input voltage 4 60 V
V(ANODE POR) VANODE POR Rising threshold 3.9 V
VANODE POR Falling threshold 2.2 2.8 3.1 V
V(ANODE POR(Hys)) VANODE POR Hysteresis 0.44 0.67 V
I(SHDN) Shutdown Supply Current V(EN) = 0 V 0.9 1.5 µA
I(Q) Operating Quiescent Current 80 130 µA
ENABLE INPUT
V(EN_IL) Enable input low threshold 0.5 0.9 1.22 V
V(EN_IH) Enable input high threshold 1.06 2 2.6 V
V(EN_Hys) Enable Hysteresis 0.52 1.35 V
I(EN) Enable sink current V(EN) = 12 V 3 5 µA
VANODE to VCATHODE
V(AK REG) Regulated Forward V(AK) Threshold 13 20 29 mV
V(AK) V(AK) threshold for full conduction mode 34 54 59 mV
V(AK REV) V(AK) threshold for reverse current blocking –17 –11 –2 mV
Gm Regulation Error AMP Transconductance (1) 1200 1800 3100 µA/V
SWITCH
R(SW) Battery sensing disconnect switch resistance 4 V < V(ANODE) ≤ 60 V 10 19.5 46 Ω
GATE DRIVE
I(GATE) Peak source current V(ANODE) – V(CATHODE) = 100 mV, 
V(GATE) – V(ANODE) = 5 V		 3 11 mA
Peak sink current V(ANODE) – V(CATHODE) = –20 mV, 
V(GATE) – V(ANODE) = 5 V		 2000 mA
Regulation max sink current V(ANODE) – V(CATHODE) = 0 V, 
V(GATE) – V(ANODE) = 5 V		 6 26 µA
RDSON discharge switch RDSON V(ANODE) – V(CATHODE) = –20 mV, 
V(GATE) – V(ANODE) = 100 mV		 0.4 2 Ω
CHARGE PUMP
I(VCAP) Charge Pump source current (Charge pump on) V(VCAP) – V(ANODE) = 7 V 162 300 600 µA
Charge Pump sink current (Charge pump off) V(VCAP) – V(ANODE) = 14 V 5 10 µA
V(VCAP) – V(ANODE) Charge pump voltage at V(ANODE) = 3.2 V I(VCAP) ≤ 30 µA 8 V
Charge pump turn on voltage 10.3 11.6 13 V
Charge pump turn off voltage 11 12.4 13.9 V
Charge Pump Enable comparator Hysteresis 0.4 0.8 1.2 V
V(VCAP UVLO) V(VCAP) – V(ANODE) UV release at rising edge V(ANODE) – V(CATHODE) = 100 mV 5.7 6.5 7.5 V
V(VCAP) – V(ANODE) UV threshold at falling edge V(ANODE) – V(CATHODE) = 100 mV 5.05 5.4 6.2 V
CATHODE
I(CATHODE) CATHODE sink current V(ANODE) = 12 V, V(ANODE) – V(CATHODE) = –100 mV 1.7 2 µA
I(CATHODE) CATHODE sink current V(ANODE) – V(CATHODE) = –100 mV 1.2 2.5 µA
I(CATHODE) CATHODE sink current V(ANODE) = –14 V, V(DRAIN) = 0 V 2 µA
I(CATHODE) CATHODE sink current V(ANODE) = –16 V, V(CATHODE) = 16 V 24 µA
(1) Parameter assured by design and characterization