SNOSDF7A May   2023  – December 2023 LM74703-Q1 , LM74704-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Voltage
      2. 8.3.2 Charge Pump
      3. 8.3.3 Gate Driver
      4. 8.3.4 Enable
      5. 8.3.5 FET Status Indication (FETGOOD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Conduction Mode
        1. 8.4.2.1 Regulated Conduction Mode
        2. 8.4.2.2 Full Conduction Mode
        3. 8.4.2.3 Reverse Current Protection Mode
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Considerations
        2. 9.2.2.2 MOSFET Selection
        3. 9.2.2.3 Charge Pump VCAP, Input and Output Capacitance
        4. 9.2.2.4 Selection of TVS Diodes for 12-V Battery Protection Applications
        5. 9.2.2.5 Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.4.1 Layout Guidelines

  • Connect ANODE, GATE, and CATHODE pins of LM74703-Q1, LM74704-Q1 close to the SOURCE, GATE, and DRAIN pins of the MOSFET.
  • The high current path of this design is through the MOSFET, using thick traces for source and drain of the MOSFET to minimize resistive losses is important.
  • The charge pump capacitor across VCAP+ and VCAP– pins must be kept away from the MOSFET to lower the thermal effects on the capacitance value.
  • The GATE pin of the LM74703-Q1, LM74704-Q1 must be connected to the MOSFET gate with a short trace. Avoid excessively thin and long traces to the Gate Drive.
  • Keep the GATE pin close to the MOSFET to avoid increases in MOSFET turn-off delay due to trace resistance.
  • Obtaining acceptable performance with alternate layout schemes is possible, however the layout shown in the Layout Example is intended as a guideline and produces good results.