SNOSDC2B
September 2021 – July 2022
LM74721-Q1
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Typical Characteristics
7
Parameter Measurement Information
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Reverse Battery Protection (A, C, GATE)
8.3.1.1
Input TVS Less Operation: VDS Clamp
8.3.2
Load Disconnect Switch Control (PD)
8.3.3
Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
8.3.4
Boost Regulator
8.4
Shutdown Mode
9
Application and Implementation
9.1
Application Information
9.2
Typical 12-V Reverse Battery Protection Application
9.2.1
Design Requirements for 12-V Battery Protection
9.2.2
Detailed Design Procedure
9.2.2.1
Boost Converter Components (C2, C3, L1)
9.2.2.2
Input and Output Capacitance
9.2.2.3
Hold-Up Capacitance
9.2.2.4
MOSFET Selection: Q1
9.2.3
Application Curves
9.3
What to Do and What Not to Do
10
Power Supply Recommendations
10.1
Transient Protection
11
Layout
11.1
Layout Guidelines
11.2
Layout Example
12
Device and Documentation Support
12.1
Receiving Notification of Documentation Updates
12.2
Support Resources
12.3
Trademarks
12.4
Electrostatic Discharge Caution
12.5
Glossary
13
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
DRR|12
MPSS085A
Thermal pad, mechanical data (Package|Pins)
DRR|12
PPTD367
Orderable Information
snosdc2b_oa
snosdc2b_pm
1
Features
AEC-Q100 qualified with the following results
Device temperature grade 1:
–40°C to +125°C ambient operating temperature range
Device HBM ESD classification level 2
Device CDM ESD classification level C4B
3-V to 65-V input range
Reverse input protection down to –33 V
Integrated VDS clamp for Input TVS less operation for ISO7637 pulse suppression
Low quiescent current 35 µA (max) in operation
Low 3.3-µA (max) shutdown current (EN = Low)
Ideal diode operation with 17-mV A to C forward voltage drop regulation
Drives external back-to-back N-Channel MOSFETs
Integrated 30-mA boost regulator
Fast response to reverse current blocking: 0.5 µs
Active rectification up to 100 kHz
Adjustable overvoltage protection
Available in space saving 12-pin WSON package
Pin-to-pin compatible with
LM74720-Q1