SNOSD95C April   2020  – December 2020 LM7480-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Charge Pump
      2. 9.3.2 Dual Gate Control (DGATE, HGATE)
        1. 9.3.2.1 Reverse Battery Protection (A, C, DGATE)
        2. 9.3.2.2 Load Disconnect Switch Control (HGATE, OUT)
      3. 9.3.3 Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
      4. 9.3.4 Low Iq Shutdown and Under Voltage Lockout (EN/UVLO)
    4. 9.4 Device Functional Modes
    5. 9.5 Application Examples
      1. 9.5.1 Redundant Supply OR-ing with Inrush Current Limiting, Overvoltage Protection and ON/OFF Control
      2. 9.5.2 Ideal Diode with Unsuppressed Load Dump Protection
  10. 10Applications and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical 12-V Reverse Battery Protection Application
      1. 10.2.1 Design Requirements for 12-V Battery Protection
      2. 10.2.2 Automotive Reverse Battery Protection
        1. 10.2.2.1 Input Transient Protection: ISO 7637-2 Pulse 1
        2. 10.2.2.2 AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
        3. 10.2.2.3 Input Micro-Short Protection: LV124 E-10
      3. 10.2.3 Detailed Design Procedure
        1. 10.2.3.1 Design Considerations
        2. 10.2.3.2 Charge Pump Capacitance VCAP
        3. 10.2.3.3 Input and Output Capacitance
        4. 10.2.3.4 Hold-Up Capacitance
        5. 10.2.3.5 Overvoltage Protection and Battery Monitor
      4. 10.2.4 MOSFET Selection: Blocking MOSFET Q1
      5. 10.2.5 MOSFET Selection: Hot-Swap MOSFET Q2
      6. 10.2.6 TVS Selection
      7. 10.2.7 Application Curves
    3. 10.3 200-V Unsuppressed Load Dump Protection Application
      1. 10.3.1 Design Requirements for 200-V Unsuppressed Load Dump Protection
      2. 10.3.2 Design Procedure
        1. 10.3.2.1 Charge Pump Capacitance VCAP
        2. 10.3.2.2 Input and output capacitance
        3. 10.3.2.3 VS Capacitance, Resistor and Zener Clamp
        4. 10.3.2.4 Overvoltage Protection and Output Clamp
        5. 10.3.2.5 MOSFET Q1 Selection
        6. 10.3.2.6 Input TVS Selection
        7. 10.3.2.7 MOSFET Q2 Selection
      3. 10.3.3 Application Curves
    4. 10.4 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Transient Protection
    2. 11.2 TVS Selection for 12-V Battery Systems
    3. 11.3 TVS Selection for 24-V Battery Systems
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Support Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.1 Application Information

LM7480x-Q1 controls two N-channel power MOSFETs with DGATE used to control diode MOSFET to emulate an ideal diode and HGATE controlling second MOSFET for power path cut-off when disabled or during an overvoltage protection. HGATE controlled MOSFET can be used to clamp the output during overvoltage or load dump conditions. LM7480x-Q1 can be placed into low quiescent current mode using EN/UVLO, where both DGATE and HGATE are turned OFF.

The device has a separate supply input pin (Vs). The charge pump is derived from this supply input. With the separate supply input provision and separate GATE control architecture, the LM7480x-Q1 device offers flexibility in system design architectures and enables circuit design with various power path control topologies like common drain, common source, ORing and Power MUXing. With these various topologies, the system designers can design the front-end power system to meet various system design requirements. For more information, see the Six System Architectures With Robust Reverse Battery Protection Using an Ideal Diode Controller Application Report.