SNOSDD9 December   2022 LM7481

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump
      2. 8.3.2 Dual Gate Control (DGATE, HGATE)
        1. 8.3.2.1 Reverse Battery Protection (A, C, DGATE)
        2. 8.3.2.2 Load Disconnect Switch Control (HGATE, OUT)
      3. 8.3.3 Overvoltage Protection and Battery Voltage sensing (VSNS, SW, OV)
      4. 8.3.4 Low Iq Shutdown and Undervoltage Lockout (EN/UVLO)
    4. 8.4 Device Functional Modes
    5. 8.5 Application Examples
      1. 8.5.1 Redundant Supply OR-ing With Inrush Current Limiting, Overvoltage Protection and ON/OFF Control
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical 12-V Reverse Battery Protection Application
      1. 9.2.1 Design Requirements for 12-V Battery Protection
      2. 9.2.2 Automotive Reverse Battery Protection
      3. 9.2.3 Detailed Design Procedure
        1. 9.2.3.1 Design Considerations
        2. 9.2.3.2 Charge Pump Capacitance VCAP
        3. 9.2.3.3 Input and Output Capacitance
        4. 9.2.3.4 Hold-up Capacitance
        5. 9.2.3.5 Overvoltage Protection and Battery Monitor
      4. 9.2.4 MOSFET Selection: Blocking MOSFET Q1
      5. 9.2.5 MOSFET Selection: Hot-Swap MOSFET Q2
      6. 9.2.6 TVS selection
      7. 9.2.7 Application Curves
    3. 9.3 Do's and Don'ts
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Transient Protection
      2. 9.4.2 TVS Selection for 12-V Battery Systems
      3. 9.4.3 TVS Selection for 24-V Battery Systems
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.5.1 Layout Guidelines

  • For the ideal diode stage, connect A, DGATE and C pins of LM7481 close to the MOSFET's SOURCE, GATE and DRAIN pins.

  • For the load disconnect stage, connect HGATE and OUT pins of LM7481 close to the MOSFET's GATE and SOURCE pins.

  • The high current path of for this solution is through the MOSFET, therefore it is important to use thick and short traces for source and drain of the MOSFET to minimize resistive losses.

  • The DGATE pin of the LM7481 must be connected to the MOSFET GATE with short trace.

  • Place transient suppression components close to LM7481.

  • Place the decopuling capacitor, CVS close to VS pin and chip GND.

  • The charge pump capacitor across CAP and VS pins must be kept away from the MOSFET to lower the thermal effects on the capacitance value.
  • Obtaining acceptable performance with alternate layout schemes is possible, however the layout shown in the Layout Example is intended as a guideline and to produce good results.