SNOSDE6B
december 2022 – july 2023
LM74900-Q1
,
LM74910-Q1
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
4
Revision History
5
Device Comparison Table
6
Pin Configuration and Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings
7.3
Recommended Operating Conditions
7.4
Thermal Information
7.5
Electrical Characteristics
7.6
Switching Characteristics
7.7
Typical Characteristics
8
Parameter Measurement Information
9
Detailed Description
9.1
Overview
9.2
Functional Block Diagram
9.3
Feature Description
9.3.1
Charge Pump
9.3.2
Dual Gate Control (DGATE, HGATE)
9.3.2.1
Reverse Battery Protection (A, C, DGATE)
9.3.2.2
Load Disconnect Switch Control (HGATE, OUT)
9.3.3
Overcurrent Protection (CS+, CS-, ILIM, IMON, TMR)
9.3.3.1
Pulse Overload Protection, Circuit Breaker
9.3.3.2
Overcurrent Protection With Latch-Off
9.3.3.3
Short Circuit Protection (ISCP)
9.3.3.4
Analog Current Monitor Output (IMON)
9.3.4
Undervoltage Protection, Overvoltage Protection, and Battery Voltage Sensing (UVLO, OV, SW)
9.3.5
Low IQ SLEEP Mode (SLEEP)
9.3.6
Ultra Low IQ Shutdown (EN)
10
Applications and Implementation
10.1
Application Information
10.2
Typical 12-V Reverse Battery Protection Application
10.2.1
Design Requirements for 12-V Battery Protection
10.2.2
Automotive Reverse Battery Protection
10.2.2.1
Input Transient Protection: ISO 7637-2 Pulse 1
10.2.2.2
AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
10.2.2.3
Input Micro-Short Protection: LV124 E-10
10.2.3
Detailed Design Procedure
10.2.3.1
Design Considerations
10.2.3.2
Charge Pump Capacitance VCAP
10.2.3.3
Input and Output Capacitance
10.2.3.4
Hold-Up Capacitance
10.2.3.5
Selection of Current Sense Resistor, RSNS
10.2.3.6
Selection of Scaling Resistor (RSET) and Short-Circuit Protection Setting Resistor (RSCP)
10.2.3.7
Overcurrent Limit (ILIM), Circuit Breaker Timer (TMR), and Current Monitoring Output (IMON) Selection
10.2.3.8
Overvoltage Protection and Battery Monitor
10.2.4
MOSFET Selection: Blocking MOSFET Q1
10.2.5
MOSFET Selection: Hot-Swap MOSFET Q2
10.2.6
TVS Selection
10.2.7
Application Curves
10.3
Addressing Automotive Input Reverse Battery Protection Topologies With LM749x0-Q1
10.4
Power Supply Recommendations
10.4.1
Transient Protection
10.4.2
TVS Selection for 12-V Battery Systems
10.5
Layout
10.5.1
Layout Guidelines
11
Device and Documentation Support
11.1
Receiving Notification of Documentation Updates
11.2
Support Resources
11.3
Trademarks
11.4
Electrostatic Discharge Caution
11.5
Glossary
12
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
RGE|24
MPQF124G
Thermal pad, mechanical data (Package|Pins)
RGE|24
QFND703
Orderable Information
snosde6b_oa
snosde6b_pm
1
Features
AEC-Q100 qualified for automotive applications
Device temperature grade 1:
–40°C to +125°C ambient operating temperature range
Functional Safety-Capable
Documentation available to aid functional safety system design
3-V to 65-V input range
Reverse input protection down to –65 V
Drives external back-to-back N-Channel MOSFETs in common drain configuration
Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
Low reverse detection threshold (–10.5 mV) with fast turn off response (0.5 µs)
20-mA peak gate (DGATE) turn on current
2.6-A peak DGATE turnoff current
Adjustable overcurrent and short circuit protection
Analog current monitor output with 10% accuracy (IMON)
Adjustable overvoltage and undervoltage protection
Low 2.5-µA shutdown current (EN=Low)
SLEEP mode with 6-µA current (EN=High,
SLEEP
=Low)
Meets automotive ISO7637 transient requirements with a suitable TVS diode
Available in space saving 24-Pin VQFN package