SNOSDE6B
december 2022 – july 2023
LM74900-Q1
,
LM74910-Q1
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
4
Revision History
5
Device Comparison Table
6
Pin Configuration and Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings
7.3
Recommended Operating Conditions
7.4
Thermal Information
7.5
Electrical Characteristics
7.6
Switching Characteristics
7.7
Typical Characteristics
8
Parameter Measurement Information
9
Detailed Description
9.1
Overview
9.2
Functional Block Diagram
9.3
Feature Description
9.3.1
Charge Pump
9.3.2
Dual Gate Control (DGATE, HGATE)
9.3.2.1
Reverse Battery Protection (A, C, DGATE)
9.3.2.2
Load Disconnect Switch Control (HGATE, OUT)
9.3.3
Overcurrent Protection (CS+, CS-, ILIM, IMON, TMR)
9.3.3.1
Pulse Overload Protection, Circuit Breaker
9.3.3.2
Overcurrent Protection With Latch-Off
9.3.3.3
Short Circuit Protection (ISCP)
9.3.3.4
Analog Current Monitor Output (IMON)
9.3.4
Undervoltage Protection, Overvoltage Protection, and Battery Voltage Sensing (UVLO, OV, SW)
9.3.5
Low IQ SLEEP Mode (SLEEP)
9.3.6
Ultra Low IQ Shutdown (EN)
10
Applications and Implementation
10.1
Application Information
10.2
Typical 12-V Reverse Battery Protection Application
10.2.1
Design Requirements for 12-V Battery Protection
10.2.2
Automotive Reverse Battery Protection
10.2.2.1
Input Transient Protection: ISO 7637-2 Pulse 1
10.2.2.2
AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
10.2.2.3
Input Micro-Short Protection: LV124 E-10
10.2.3
Detailed Design Procedure
10.2.3.1
Design Considerations
10.2.3.2
Charge Pump Capacitance VCAP
10.2.3.3
Input and Output Capacitance
10.2.3.4
Hold-Up Capacitance
10.2.3.5
Selection of Current Sense Resistor, RSNS
10.2.3.6
Selection of Scaling Resistor (RSET) and Short-Circuit Protection Setting Resistor (RSCP)
10.2.3.7
Overcurrent Limit (ILIM), Circuit Breaker Timer (TMR), and Current Monitoring Output (IMON) Selection
10.2.3.8
Overvoltage Protection and Battery Monitor
10.2.4
MOSFET Selection: Blocking MOSFET Q1
10.2.5
MOSFET Selection: Hot-Swap MOSFET Q2
10.2.6
TVS Selection
10.2.7
Application Curves
10.3
Addressing Automotive Input Reverse Battery Protection Topologies With LM749x0-Q1
10.4
Power Supply Recommendations
10.4.1
Transient Protection
10.4.2
TVS Selection for 12-V Battery Systems
10.5
Layout
10.5.1
Layout Guidelines
11
Device and Documentation Support
11.1
Receiving Notification of Documentation Updates
11.2
Support Resources
11.3
Trademarks
11.4
Electrostatic Discharge Caution
11.5
Glossary
12
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
RGE|24
MPQF124G
Thermal pad, mechanical data (Package|Pins)
RGE|24
QFND703
Orderable Information
snosde6b_oa
snosde6b_pm
10.2.7
Application Curves
Figure 10-6
Start-Up 12 V With EN Pulled to VS
Figure 10-8
Reverse Input Voltage –14 V
Figure 10-10
Output Short Circuit Protection (On-The-Fly)
Figure 10-12
Output Overcurrent Protection (TIMER Duration 1 ms)
Figure 10-14
Overvoltage Protection
Figure 10-16
Overvoltage Clamp Response (OV Resistor Ladder Referred to VOUT)
Figure 10-18
Undervoltage Lockout (UVLO) Recovery
Figure 10-20
SLEEP Mode Overcurrent Protection (250 mA Typical)
Figure 10-22
Load Transient 100 mA to 5 A
Figure 10-7
Start-Up 12 V With EN Going Low to High
Figure 10-9
Inrush Current With No Load at Output
Figure 10-11
Device Start-Up With Output Short Circuit (TIMER Duration 1 ms)
Figure 10-13
Output Overcurrent Protection (TIMER Duration 1 ms): Auto Retry
Figure 10-15
Overvoltage Recovery
Figure 10-17
Undervoltage Lockout (UVLO) Protection (V
IN_UVLO
= 5.5 V).
Figure 10-19
SLEEP Mode Entry (
SLEEP
= Low, EN = High)
Figure 10-21
SLEEP Mode Exit (
SLEEP
= High, EN = High)