SNOSDF6 October   2023 LM74930-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Charge Pump
      2. 7.3.2  Dual Gate Control (DGATE, HGATE)
        1. 7.3.2.1 Load Disconnect Switch Control (HGATE, OUT)
        2. 7.3.2.2 Reverse Battery Protection (A, C, DGATE)
      3. 7.3.3  Overcurrent Protection (CS+, CS-, ILIM, IMON, TMR)
      4. 7.3.4  Overcurrent Protection with Circuit Breaker (ILIM, TMR)
      5. 7.3.5  Overcurrent Protection With Latch-Off
      6. 7.3.6  Short-Circuit Protection (ISCP)
        1. 7.3.6.1 Device Wake-Up With Output Short-Circuit Condition
      7. 7.3.7  Analog Current Monitor Output (IMON)
      8. 7.3.8  Overvoltage and Undervoltage Protection (OV, UVLO, OVCLAMP)
      9. 7.3.9  Disabling Reverse Current Blocking Functionality (MODE)
      10. 7.3.10 Device Functional Modes
        1. 7.3.10.1 Low Quiescent Current Shutdown Mode (EN)
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application: 200-V Unsuppressed Load Dump Protection Application
      1. 8.2.1 Design Requirements for 200-V Unsuppressed Load Dump Protection
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  VS Capacitance, Resistor R1 and Zener Clamp (DZ)
        2. 8.2.2.2  Charge Pump Capacitance VCAP
        3. 8.2.2.3  Input and Output Capacitance
        4. 8.2.2.4  Overvoltage and Undervoltage Protection Component Selection
        5. 8.2.2.5  Selection of Scaling Resistor (RSET) and Short-Circuit Protection Setting Resistor (RSCP)
        6. 8.2.2.6  Overcurrent Limit (ILIM), Circuit Breaker Timer (TMR), and Current Monitoring Output (IMON) Selection
        7. 8.2.2.7  Selection of Current Sense Resistor, RSNS
        8. 8.2.2.8  Hold-Up Capacitance
        9. 8.2.2.9  MOSFET Q1 Selection
        10. 8.2.2.10 MOSFET Q2 Selection
        11. 8.2.2.11 Input TVS Selection
      3. 8.2.3 Application Curves
    3. 8.3 Best Design Practices
    4. 8.4 Power Supply Recommendations
      1. 8.4.1 Transient Protection
      2. 8.4.2 TVS Selection for 12-V Battery Systems
      3. 8.4.3 TVS Selection for 24-V Battery Systems
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.4.1 Transient Protection

When the external MOSFETs turn OFF during the conditions such as overvoltage cut-off, reverse current blocking, EN/UVLO causing an interruption of the current flow, the input line inductance generates a positive voltage spike on the input and output inductance generates a negative voltage spike on the output. The peak amplitude of voltage spikes (transients) depends on the value of inductance in series to the input or output of the device. These transients can exceed the Absolute Maximum Ratings of the device if steps are not taken to address the issue.

Typical methods for addressing transients include:

  • Minimizing lead length and inductance into and out of the device.
  • Using large PCB GND plane.
  • Use of a Schottky diode across the output and GND to absorb negative spikes.
  • A low value ceramic capacitor (C(IN) to approximately 0.1 μF) to absorb the energy and dampen the transients.

The approximate value of input capacitance can be estimated with Equation 20.

Equation 20. VSPIKE_MAX=VIN+ILOAD×LINCIN

where

  • V(IN) is the nominal supply voltage
  • I(LOAD) is the load current
  • L(IN) equals the effective inductance seen looking into the source
  • C(IN) is the capacitance present at the input

Some applications can require additional Transient Voltage Suppressor (TVS) to prevent transients from exceeding the Absolute Maximum Ratings of the device. These transients can occur during EMC testing such as automotive ISO7637 pulses.

The circuit implementation with optional protection components (a ceramic capacitor, TVS and Schottky diode) is shown in Figure 8-14

GUID-20231013-SS0I-X9GL-SWMH-BQWT2L0DGQG4-low.svg
* Optional components needed for suppression of transients
Figure 8-14 Circuit Implementation with Optional Protection Components for LM74930-Q1