SNIS139F February 2005 – January 2024 LM95231
PRODUCTION DATA
When a transistor is connected as a diode, the following relationship holds for variables VBE, T and IF:
where
In the active region, the -1 term is negligible and may be eliminated, yielding the following equation
In Equation 2, η and IS are dependant upon the process that was used in the fabrication of the particular diode. By forcing two currents with a very controlled ratio (IF2/IF1) and measuring the resulting voltage difference, it is possible to eliminate the IS term. Solving for the forward voltage difference yields the relationship:
Solving Equation 3 for temperature yields:
Equation 4 holds true when a diode connected transistor such as the MMBT3904 is used. When this “diode” equation is applied to an integrated diode such as a processor transistor with its collector tied to GND as shown in Figure 8-1 it will yield a wide non-ideality spread. This wide non-ideality spread is not due to true process variation but due to the fact that Equation 4 is an approximation.
TruTherm technology uses the transistor equation, Equation 5, which is a more accurate representation of the topology of the thermal diode found in an FPGA or processor.
TruTherm should only be enabled when measuring the temperature of a transistor integrated as shown in the processor of Figure 8-1, because Equation 5 only applies to this topology.