SNOSD45B February   2018  – October 2018 LMG1020

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified LiDAR Driver Stage Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Stage
      2. 7.3.2 Output Stage
      3. 7.3.3 VDD and undervoltage lockout
      4. 7.3.4 Overtemperature Protection (OTP)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Handling Ground Bounce
        2. 8.2.2.2 Creating Nanosecond Pulse With LMG1020
      3. 8.2.3 VDD and Overshoot
      4. 8.2.4 Operating at Higher Frequency
      5. 8.2.5 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Gate Drive Loop Inductance and Ground Connection
      2. 10.1.2 Bypass Capacitor
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) SN1020 UNIT
YFF (WCSP)
6 PINS
RθJA Junction-to-ambient thermal resistance 133.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 1.7 °C/W
RθJB Junction-to-board thermal resistance 38.1 °C/W
ΨJT Junction-to-top characterization parameter 0.5 °C/W
YJB Junction-to-board characterization parameter 38.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.