Refer to the PDF data sheet for device specific package drawings
The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.
The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.
PART NUMBER | PACKAGE(1) | BODY SIZE (NOM) |
---|---|---|
LMG1025QDRVRQ1 | DRV (WSON 6) | 2mm x 2mm |
LMG1025QDEERQ1 | DEE (WSON 6) | 2mm x 2mm |
PIN | I/O(1) | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
GND | 2 | G | Power supply and source return. Connect with a direct path to the transistor’s source. |
IN+ | 1 | I | Positive logic-level input. |
IN– | 6 | I | Negative logic-level input. |
OUTL | 5 | O | Pull-down gate drive output. Connect through an optional resistor to the target transistor’s gate. |
OUTH | 4 | O | Pull-up gate drive output. Connect through a resistor to the target transistor’s gate. |
VDD | 3 | P | Input voltage supply. Decouple through a compact capacitor to GND. |
Thermal Pad | - | - | Internally connected to GND through substrate. Connect this pad to large copper area, generally a ground plane. |