The LMG1025-Q1 is a single channel
low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching
frequency automotive applications. Narrow pulse width capability, fast switching
specification, and small pulse distortion combine to significantly enhance LiDAR,
ToF, and Power Converter performance. 1.25ns output pulse width enables more
powerful, eye-safe diode pulses. This, combined with 300ns distortion, leads to
longer-range, precise LiDAR/ToF systems. 2.9ns propagation delay significantly
improves the control loop response time and thus overall performance of the power
converters. Split output allows the drive strength and timing to be independently
adjusted through external resistors between OUTH, OUTL, and the FET gate.
The driver features undervoltage
lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not
damaged in overload or fault conditions. LMG1025-Q1 is available in a compact,
leadless, AEC-Q100 automotive qualified package to meet the size and gate loop
inductance requirements of high switching frequency automotive applications.
Device Information
PART NUMBER |
PACKAGE(1) |
BODY SIZE (NOM) |
LMG1025QDRVRQ1 |
DRV (WSON 6) |
2mm x 2mm |
LMG1025QDEERQ1 |
DEE (WSON 6) |
2mm x 2mm |