SNOSD74C May 2019 – December 2024 LMG1025-Q1
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
LMG1025-Q1 is a high-performance low-side 5-V gate driver for GaN and logic-level MOSFETs. While it is designed to function well in high-speed applications, such as wireless power transmission and LiDAR/ToF, it can be used in any application where a low-side gate driver is required. The LMG1025-Q1 is optimized to provide the lowest propagation delay through the driver to the power transistor. LMG1025-Q1 is in a small 2mm×2mm QFN package with wettable flanks, in order to minimize its parasitic inductance. This low inductance design is necessary to achieve high current, low ringing performance in very high frequency operation when driving power FETs. The same holds true for when designing with LMG1025-Q1. QFN package with wettable flanks is also needed to improve system robustness in many automotive applications.