SNOSD37B march   2017  – april 2023 LMG1205

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input and Output
      2. 7.3.2 Start-up and UVLO
      3. 7.3.3 HS Negative Voltage and Bootstrap Supply Voltage Clamping
      4. 7.3.4 Level Shift
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VDD Bypass Capacitor
        2. 8.2.2.2 Bootstrap Capacitor
        3. 8.2.2.3 Power Dissipation
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
      1.      Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Power Supply Recommendations

The recommended bias supply voltage range for LMG1205 is from 4.5 V to 5.5 V. The lower end of this range is governed by the internal UVLO protection feature of the VDD supply circuit. TI recommends keeping proper margin to allow for transient voltage spikes while not violating the LMG1205 absolute maximum VDD voltage rating and the GaN transistor gate breakdown voltage limit.

The UVLO protection feature also involves a hysteresis function. This means that once the device is operating in normal mode, if the VDD voltage drops, the device continues to operate in normal mode as far as the voltage drop does not exceeds the hysteresis specification, VDDH. If the voltage drop is more than hysteresis specification, the device shuts down. Therefore, while operating at or near the 4.5-V range, the voltage ripple on the VDD power supply output must be smaller than the hysteresis specification of LMG1205 UVLO to avoid triggering device shutdown.

A local bypass capacitor must be placed between the VDD and VSS pins. This capacitor must be located as close as possible to the device. TI recommends a low-ESR, ceramic, surface-mount capacitor. TI also recommends using 2 capacitors across VDD and GND: a 100-nF ceramic surface-mount capacitor for high frequency filtering placed very close to VDD and GND pin, and another surface-mount capacitor, 220 nF to 10 μF, for IC bias requirements.