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Data Sheet
LMG2100R026 100V, 53A GaN Half-Bridge Power Stage
1 Features
- Integrated half-bridge GaN FETs and driver
- 93V continuous, 100V pulsed voltage rating
- Package optimized for easy PCB layout
- High slew rate switching with low ringing
- 5V external bias power supply
- Supports 3.3V and 5V input logic levels
- Gate driver capable of up to 10MHz switching
- Excellent propagation delay (33ns typical) and matching (2ns typical)
- Internal bootstrap supply voltage clamping to
prevent GaN FET overdrive
- Supply rail undervoltage for lockout
protection
- Low power consumption
- Exposed top QFN package for
top-side cooling
- Large GND pad for bottom-side cooling
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