SNOSDJ1A July   2024  – October 2024 LMG2100R026

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay and Mismatch Measurement
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Control Inputs
      2. 7.3.2 Start-Up and UVLO
      3. 7.3.3 Bootstrap Supply Voltage Clamping
      4. 7.3.4 Level Shift
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VCC Bypass Capacitor
        2. 8.2.2.2 Bootstrap Capacitor
        3. 8.2.2.3 Slew Rate Control
        4. 8.2.2.4 Power Dissipation
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • VBN|18
  • VBN|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.2.1 VCC Bypass Capacitor

The VCC bypass capacitor provides the gate charge for the low-side and high-side transistors and absorbs the reverse recovery charge of the bootstrap diode. The required bypass capacitance can be calculated with Equation 1.

Equation 1. CVCC = (2×QG + QRR) / ΔV

QG is the individual and equal gate charge of the high-side and low-side GaN FETs. QRR is the reverse recovery charge of the bootstrap diode. ΔV is the maximum allowable voltage drop across the bypass capacitor. A 0.1-µF or larger value, good-quality, ceramic capacitor is recommended. Place the bypass capacitor as close as possible to the VCC and AGND pins of the device to minimize the parasitic inductance.