SNOSDI8 May   2024 LMG2650

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 GaN Power FET Switching Parameters
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  GaN Power FET Switching Capability
      2. 7.3.2  Turn-On Slew-Rate Control
      3. 7.3.3  Current-Sense Emulation
      4. 7.3.4  Bootstrap Diode Function
      5. 7.3.5  Input Control Pins (EN, INL, INH, GDH)
      6. 7.3.6  INL - INH Interlock
      7. 7.3.7  AUX Supply Pin
        1. 7.3.7.1 AUX Power-On Reset
        2. 7.3.7.2 AUX Under-Voltage Lockout (UVLO)
      8. 7.3.8  BST Supply Pin
        1. 7.3.8.1 BST Power-On Reset
        2. 7.3.8.2 BST Under-Voltage Lockout (UVLO)
      9. 7.3.9  Overcurrent Protection
      10. 7.3.10 Overtemperature Protection
      11. 7.3.11 Fault Reporting
    4. 7.4 Device Functional Modes
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
  • RFB|19
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 Electrical Characteristics

1) Symbol definitions: VDS(ls) = SW to SL voltage; IDS(ls) = SW to SL current; VDS(hs) = DH to SW voltage; ID(hs) = DH to SW current; ISW = SW point current into device; 2) Unless otherwise noted: voltage, resistance, and capacitance are respect to AGND; –40°C ≤ TJ ≤ 125°C; VDS(ls) = 520V; VDS(hs) = 520V; 10V ≤ VAUX ≤ 26V; 7.5V ≤ VBST_SW ≤ 26V; VEN = 5V; VINL = 0V; VINH = 0V; VGDH_SW = 0V; RRDRVL = 0Ω; RRDRVH_SW = 0Ω; RCS = 100Ω
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LOW-SIDE GAN POWER FET
RDS(on)(ls) Drain-source (SW to SL) on resistance VINL = 5V, ID(ls) = 5.25A, TJ = 25°C 95 mΩ
VINL = 5V, ID(ls) = 5.25A, TJ = 125°C 178
VSD(ls) Source-drain (SL to SW) third-quadrant voltage SL to SW current = 0.525A 1.9 V
SL to SW current = 5.25A 2.6
IDSS(ls) Drain (SW to SL) leakage current VDS(hs) = 0V, VDS(ls) = 650V, TJ = 25°C 3.6 µA
VDS(hs) = 0V, VDS(ls) = 650V, TJ = 125°C 18.2
QOSS(ls) Output (SW to SL) charge VDS(hs) = 0V, VDS(ls) = 400V 34.7 nC
COSS(ls) Output (SW to SL) capacitance 54.2 pF
EOSS(ls) Output (SW to SL) capacitance stored energy 4.69 µJ
COSS,er(ls) Energy related effective output (SW to SL) capacitance 58.1 pF
COSS,tr(ls) Time related effective output (SW to SL) capacitance VDS(hs) = 0V, VDS(ls) = 0V to 400V 86.3 pF
Eon(ls) Hard-switching turn-on energy VINL = 0V to 5V, VDS(ls) = 400V to 0V, ISW = 5.25A, slew rate setting 0 (slowest) 130 µJ
VINL = 0V to 5V, VDS(ls) = 400V to 0V, ISW = 5.25A, slew rate setting 3 (fastest) 20
VINL = 0V to 5V, VDS(ls) = 400V to 0V, ISW = 0.525A, slew rate setting 0 (slowest) TBD
VINL = 0V to 5V, VDS(ls) = 400V to 0V, ISW = 0.525A, slew rate setting 3 (fastest) TBD
Eoff(ls) Hard-switching turn-off energy VINL = 5V to 0V, VDS(ls) = 0V to 400V, ISW = 5.25A TBD
µJ
VINL = 5V to 0V, VDS(ls) = 0V to 400V, ISW = 0.525A TBD
QRR(ls) Reverse recovery charge 0 nC
HIGH-SIDE GAN POWER FET
RDS(on)(hs) Drain-source (DH to SW) on resistance VINH = 5V, ID(hs) = 5.25A, TJ = 25°C 95 mΩ
VINH = 5V, ID(hs) = 5.25A, TJ = 125°C 170
VSD(hs) Source-drain (SW to DH) third-quadrant voltage SW to DH current = 0.525A 1.9 V
SW to DH current = 5.25A 2.6
IDSS(hs) Drain (DH to SW) leakage current VDS(ls) = 0V, VDS(hs) = 650V, TJ = 25°C 3.6 µA
VDS(ls) = 0V, VDS(hs) = 650V, TJ = 125°C 18.2
QOSS(hs) Output (DH to SW) charge VDS(ls) = 0V, VDS(hs) = 400V 34.7 nC
COSS(hs) Output (DH to SW) capacitance 54.2 pF
EOSS(hs) Output (DH to SW) capacitance stored energy 4.69 µJ
COSS,er(hs) Energy related effective output (DH to SW) capacitance 58.1 pF
COSS,tr(hs) Time related effective output (DH to SW) capacitance VDS(ls) = 0V, VDS(hs) = 0V to 400V 86.3 pF
Eon(hs) Hard-switching turn-on energy VINH = 0V to 5V, VDS(hs) = 400V to 0V, ISW = –5.25A, slew rate setting 0 (slowest) 130 µJ
VINH = 0V to 5V, VDS(hs) = 400V to 0V, ISW = –5.25A, slew rate setting 3 (fastest) 20
VINH = 0V to 5V, VDS(hs) = 400V to 0V, ISW = –0.5.25A, slew rate setting 0 (slowest) TBD
VINH = 0V to 5V, VDS(hs) = 400V to 0V, ISW = –0.5.25A, slew rate setting 3 (fastest) TBD
Eoff(hs) Hard-switching turn-off energy VINH = 5V to 0V, VDS(hs) = 0V to 400V, ISW = –5.25A TBD
µJ
VINH = 5V to 0V, VDS(hs) = 0V to 400V, ISW = –0.525A TBD
QRR(hs) Reverse recovery charge 0 nC
LOW-SIDE OVERCURRENT PROTECTION
IT(OC)(ls) Overcurrent fault – threshold current 9.5 10.5 11.5 A
HIGH-SIDE OVERCURRENT PROTECTION
IT(OC)(hs) Overcurrent fault – threshold current 9.5 10.5 11.5 A
BOOTSTRAP RECTIFIER
RDS(on) AUX to BST on resistance VINL = 5V, VAUX_BST = 1V, TJ = 25°C 8 Ω
VINL = 5V, VAUX_BST = 1V, TJ = 125°C 14
AUX to BST current limit VINL = 5V, VAUX_BST = 7V 210 240 270 mA
BST to AUX reverse current blocking threshold VINL = 5V 15 mA
CS
Current sense gain (ICS(src) / ID(LS)) VINL = 5V, 0V ≤ VCS ≤ 2V, 0A ≤ ID(ls)< IT(OC)(ls) 0.554 mA/A
Current sense input offset current VINL = 5V, 0V ≤ VCS ≤ 2V, 0A ≤ ID(ls)< IT(OC)(ls) –91 91 mA
Initial held output after overcurrent fault occurs while INL remains high VINL = 5V, 0V ≤ VCS ≤ 2V 7 mA
ICS(src)(OC)(final) Final held output after overcurrent fault occurs while INL remains high VINL = 5V, 0V ≤ VCS ≤ 2V 10 12 15.5 mA
Output clamp voltage VINL = 5V, ID(ls) = 9.0A, CS sinking 5mA from external source 2.55 V
EN, INL, INH to AGND; GDH to SW
VIT+ Positive-going input threshold voltage 1.7 2.45 V
VIT– Negative-going input threshold voltage  0.7 1.3 V
Input threshold voltage hysteresis 1 V
Pull-down input resistance 0V ≤ VPIN ≤ 3V 200 400 600 kΩ
Pull-down input current 10V ≤ VPIN ≤ 26V; VAUX = 26V 10 µA
OVERTEMPERATURE PROTECTION
Temperature fault – postive-going threshold temperature 165 °C
Temperature fault – negative-going threshold temperature 145 °C
Temperature fault – threshold temperature hysteresis 20 °C
AUX
VAUX,T+(UVLO) UVLO – positive-going threshold voltage 8.9 9.3 9.7 V
UVLO – negative-going threshold voltage 8.6 9.0 9.4 V
UVLO – threshold voltage hysteresis 250 mV
Standby quiescent current VEN = 0V 50 110 µA
Quiescent current 250 400 µA
VINL = 5V, ID(ls) = 0A TBD
Operating current VINL = 0V or 5V, VDS(ls) = 0V, ID(ls) = 0A, fINL = 500kHz TBD mA
VINL = 0V or 5V, VDS(ls) = 400V or 0V, ISW = 1A, fINL= 500kHz TBD
BST
VBST_SW,T+(UVLO) VBST_SW UVLO for FET to turn on – positive-going threshold voltage 6.7 7 7.3 V
VBST_SW UVLO for FET to stay on– negative-going threshold voltage 4.8 5.1 5.4 V
Quiescent current 85 120 µA
VINH = 5V, ID(hs) = 0A TBD
VGDH_SW = 5V, ID(hs) = 0A TBD
Operating current VINH = 0V or 5V, VDS(hs) = 0V, IDS(hs) = 0A; fINH = 500kHz TBD mA
VINH = 0V or 5V, VDS(hs) = 400V or 0V, ISW = 1A; fINH = 500kHz TBD
VGDH_SW = 0V or 5V, VDS(hs) = 0V, IDS(hs) = 0A; fINH = 500kHz TBD
VGDH_SW = 0V or 5V, VDS(hs) = 400V or 0V, ISW = 1A; fGDH_SW = 500kHz TBD