SNOSD81B September   2018  – January 2020 LMG3410R050 , LMG3411R050

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Simplified Block Diagram
      2.      Switching Performance at >100 V/ns
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 Switching Parameters
      1. 7.1.1 Turn-on Delays
      2. 7.1.2 Turn-off Delays
      3. 7.1.3 Drain Slew Rate
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Direct-Drive GaN Architecture
      2. 8.3.2 Internal Buck-Boost DC-DC Converter
      3. 8.3.3 Internal Auxiliary LDO
      4. 8.3.4 Start Up Sequence
      5. 8.3.5 R-C Decoupling for IN pin
      6. 8.3.6 Low Power Mode
      7. 8.3.7 Fault Detection
        1. 8.3.7.1 Over-current Protection
        2. 8.3.7.2 Over-Temperature Protection and UVLO
      8. 8.3.8 Drive Strength Adjustment
    4. 8.4 Safe Operation Area (SOA)
      1. 8.4.1 Repetitive SOA
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Slew Rate Selection
          1. 9.2.2.1.1 Startup and Slew Rate with Bootstrap High-Side Supply
        2. 9.2.2.2 Signal Level-Shifting
        3. 9.2.2.3 Buck-Boost Converter Design
    3. 9.3 Do's and Don'ts
  10. 10Power Supply Recommendations
    1. 10.1 Using an Isolated Power Supply
    2. 10.2 Using a Bootstrap Diode
      1. 10.2.1 Diode Selection
      2. 10.2.2 Managing the Bootstrap Voltage
      3. 10.2.3 Reliable Bootstrap Start-up
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Power Loop Inductance
      2. 11.1.2 Signal Ground Connection
      3. 11.1.3 Bypass Capacitors
      4. 11.1.4 Switch-Node Capacitance
      5. 11.1.5 Signal Integrity
      6. 11.1.6 High-Voltage Spacing
      7. 11.1.7 Thermal Recommendations
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Do's and Don'ts

The successful use of GaN devices in general and the LMG341xR050 in particular depends on proper use of the device. When using the LMG341xR050, Do the following:

  • Read and fully understand the datasheet, including the application notes and layout recommendations.
  • Use a four-layer board and place the return power path on an inner layer to minimize power-loop inductance.
  • Use small, surface-mount bypass and bus capacitors to minimize parasitic inductance.
  • Use the proper size decoupling capacitors and locate them close to the IC as described in the Layout Guidelines section.
  • Use a signal isolator to supply the input signal for the low side device. If not, ensure the signal source is connected to the signal GND plane which is tied to the power source only at the LMG341xR050 IC.
  • Use the FAULT pin to determine power-up state and to detect overcurrent and overtemperature events and safely shut off the converter.

To avoid issues in your system when using the LMG341xR050, Do not do the following:

  • Use a single-layer or two-layer PCB for the LMG341xR050 as the power-loop and bypass capacitor inductances will be excessive and prevent proper operation of the IC.
  • Reduce the bypass capacitor values below the recommended values.
  • Allow the device to experience drain transients above 600 V as they may damage the device.
  • Allow significant third-quadrant conduction when the device is OFF or unpowered, which may cause overheating. Self-protection feature cannot protect the device in this mode of operation.
  • Ignore the FAULT pin output.