SNOSD81B September   2018  – January 2020 LMG3410R050 , LMG3411R050

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Block Diagram
      2.      Switching Performance at >100 V/ns
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Switching Parameters
      1. 7.1.1 Turn-on Delays
      2. 7.1.2 Turn-off Delays
      3. 7.1.3 Drain Slew Rate
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Direct-Drive GaN Architecture
      2. 8.3.2 Internal Buck-Boost DC-DC Converter
      3. 8.3.3 Internal Auxiliary LDO
      4. 8.3.4 Start Up Sequence
      5. 8.3.5 R-C Decoupling for IN pin
      6. 8.3.6 Low Power Mode
      7. 8.3.7 Fault Detection
        1. 8.3.7.1 Over-current Protection
        2. 8.3.7.2 Over-Temperature Protection and UVLO
      8. 8.3.8 Drive Strength Adjustment
    4. 8.4 Safe Operation Area (SOA)
      1. 8.4.1 Repetitive SOA
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Slew Rate Selection
          1. 9.2.2.1.1 Startup and Slew Rate with Bootstrap High-Side Supply
        2. 9.2.2.2 Signal Level-Shifting
        3. 9.2.2.3 Buck-Boost Converter Design
    3. 9.3 Do's and Don'ts
  10. 10Power Supply Recommendations
    1. 10.1 Using an Isolated Power Supply
    2. 10.2 Using a Bootstrap Diode
      1. 10.2.1 Diode Selection
      2. 10.2.2 Managing the Bootstrap Voltage
      3. 10.2.3 Reliable Bootstrap Start-up
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Power Loop Inductance
      2. 11.1.2 Signal Ground Connection
      3. 11.1.3 Bypass Capacitors
      4. 11.1.4 Switch-Node Capacitance
      5. 11.1.5 Signal Integrity
      6. 11.1.6 High-Voltage Spacing
      7. 11.1.7 Thermal Recommendations
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.7 Typical Characteristics

LMG3410R050 LMG3411R050 tDelay.gif
Figure 1. Turn-on Delays vs Drive-Strength Resistor
LMG3410R050 LMG3411R050 IDSVDS_adjusted.gif
Figure 3. IDS - VDS curve
LMG3410R050 LMG3411R050 RdsonvsTemp.gif
Figure 5. Normalized On Resistance vs Temperature
LMG3410R050 LMG3411R050 Coss_smoothed.gif
Figure 7. Output Capacitance
LMG3410R050 LMG3411R050 Eon_RDRV.gif
Figure 9. Hard-switched Half-Bridge Turn-On Switching Energy vs Slew Rate Resistor
LMG3410R050 LMG3411R050 JP_transient_fixed_2.gifFigure 11. Transient Thermal Impedance
LMG3410R050 LMG3411R050 SlewratevsRdrv.gif
Figure 2. Drain Slew Rate vs Drive-Strength Resistor
LMG3410R050 LMG3411R050 VSDvsISD.gif
Figure 4. Source-Drain Voltage in Third-quadrant Operation
LMG3410R050 LMG3411R050 Ivdd_OPvsFreq.gif
Figure 6. VDD Supply Current vs Switching Frequency
LMG3410R050 LMG3411R050 EonEoff.gif
Figure 8. Hard-switched Half-Bridge Turn-on and Turn-off Switching Energy vs Drain Current
LMG3410R050 LMG3411R050 tblank.gif
Figure 10. Blanking time vs RDRV
LMG3410R050 LMG3411R050 SOA.gifFigure 12. Safe Operation Area