SNOSD10F April   2016  – May 2020 LMG3410R070 , LMG3411R070

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Block Diagram
      2.      Switching Performance at >100 V/ns
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Switching Parameters
      1. 7.1.1 Turn-on Delays
      2. 7.1.2 Turn-off Delays
      3. 7.1.3 Drain Slew Rate
      4. 7.1.4 Turn-on and Turn-off Energy
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Direct-Drive GaN Architecture
      2. 8.3.2 Internal Buck-Boost DC-DC Converter
      3. 8.3.3 Internal Auxiliary LDO
      4. 8.3.4 Fault Detection
        1. 8.3.4.1 Over-current Protection
        2. 8.3.4.2 Over-Temperature Protection and UVLO
      5. 8.3.5 Drive Strength Adjustment
    4. 8.4 Device Functional Modes
      1. 8.4.1 Low-Power Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Slew Rate Selection
          1. 9.2.2.1.1 Startup and Slew Rate with Bootstrap High-Side Supply
        2. 9.2.2.2 Signal Level-Shifting
        3. 9.2.2.3 Buck-Boost Converter Design
      3. 9.2.3 Application Curves
    3. 9.3 Paralleling GaN Devices
    4. 9.4 Do's and Don'ts
  10. 10Power Supply Recommendations
    1. 10.1 Using an Isolated Power Supply
    2. 10.2 Using a Bootstrap Diode
      1. 10.2.1 Diode Selection
      2. 10.2.2 Managing the Bootstrap Voltage
      3. 10.2.3 Reliable Bootstrap Start-up
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Power Loop Inductance
      2. 11.1.2 Signal Ground Connection
      3. 11.1.3 Bypass Capacitors
      4. 11.1.4 Switch-Node Capacitance
      5. 11.1.5 Signal Integrity
      6. 11.1.6 High-Voltage Spacing
      7. 11.1.7 Thermal Recommendations
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Switching Characteristics

over operating free-air temperature range, 9.5 V < VDD < 18 V, VNEG = -14 V, VBUS = 400 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GaN FET
dv/dt Turn-on Drain Slew Rate RDRV = 15 kΩ 100 V/ns
RDRV = 40 kΩ 50
RDRV = 100 kΩ 25
Δdv/dt Slew Rate Variation turn on, IL = 5 A, RDRV = 40 kΩ 25 %
dv/dt Edge Rate Immunity Drain dv/dt, device remains off inductor-fed, max di/dt = 10 A/ns 150 V/ns
STARTUP
tSTART Startup Time, VIN rising above UVLO Time until gate responds to IN CNEG = 2.2 µF, CLDO = 1 µF 1 ms
DRIVER
tpd,on Propagation delay, turn on IN rising to IDS > 1 A, VDS = 400 V RDRV = 40 kΩ, VNEG = -14 V 20 ns
tdelay,on Turn on delay time IDS > 1 A to VDS < 320 V, RDRV = 40 kΩ 12 ns
tVDS,ft VDS fall time VDS = 320 V to VDS = 80 V, ID = 5 A 4.2 ns
tpd,off Propagation delay, turn off IN falling to VDS > 10 V; ID = 5 A 36 ns
tdelay,off Turn off delay time VDS = 10 V to VDS = 80 V, ID = 5 A 10 ns
tVDS,rt VDS rise time VDS = 80 V to VDS = 320 V, ID = 5 A 15 ns
FAULT
tcurr Current Fault Delay IDS > ITH to FAULT low 50 ns
tblank Current Fault Blanking Time VIN>VIH to end of blanking,  RDRV=15kΩ 55 ns
treset Fault reset time IN held low 250 350 500 µs