SNOSDA7F September 2020 – August 2024 LMG3422R030 , LMG3426R030
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The layout of the LMG342xR030 is critical to its performance and functionality. Because the half-bridge configuration is typically used with these GaN devices, layout recommendations are considered with this configuration. A four-layer or higher layer count board is required to reduce the parasitic inductances of the layout to achieve suitable performance. Figure 8-9 summarizes the critical layout guidelines, and more details are further elaborated in the following sections.