SNOSDA7F September 2020 – August 2024 LMG3422R030 , LMG3426R030
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
Overtemperature-shutdown ideal-diode mode (OTSD-IDM) is implemented in LMG342xR030. As explained in Overtemperature Shutdown Protection, ideal-diode mode provides the best GaN FET protection when the GaN FET is overheating.
OTSD-IDM accounts for all, some, or none of the power system operating when OTSD-IDM is protecting the GaN FET. The power system may not have the capability to shut itself down, in response to the LMG342xR030 asserting the FAULT pin in a GaN OTSD event, and just continue to try to operate. Parts of the power system can stop operating due to any reason such as a controller software bug or a solder joint breaking or a device shutting off to protect itself. At the moment of power system shutdown, the power system stops providing gate drive signals but the inductive elements continue to force current flow while they discharge.
The OTSD-IDM state machine is shown in Figure 7-6. Each state is assigned a state number in the upper right side of the state box.
State #1 is used to protect against shoot-through current. State #1 waits for a fixed time period before proceeding to state #2. The fixed time period is to give the opposite-side switch time to switch and create a positive drain voltage. A fixed time is used to avoid a stuck condition for cases where a positive drain voltage is not created.
State #1 will help protect against shoot-through currents if the converter continues switching when the LMG342xR030 enters OTSD. Meanwhile, if the converter initiates switching with the LMG342xR030 already in OTSD, shoot-through current protection can be obtained by switching the OTSD device first to force it to progress though state #1. For example, the synchronous rectifier in a boost PFC can go into OTSD during initial input power application as the inrush current charges the PFC output cap. A shoot-through current event can be avoided if converter switching begins by switching the synchronous rectifier FET before switching the boost PFC FET.
If there is no IN signal, the state machine only moves between states #2 and #3 as a classic ideal-diode mode state machine. This allows all the inductive elements to discharge, when the power system shuts off, with minimum discharge stress created in the GaN FET.
Note that the OTSD-IDM state machine has no protection against repetitive shoot-through current events. There are degenerate cases, such as the LMG342xR030 losing its IN signal during converter operation, which can expose the OTSD-IDM to repetitive shoot-through current events. There is no good solution in this scenario. If OTSD-IDM did not allow repeated shoot-thru current events, the GaN FET would instead be exposed to excessive off-state third-quadrant losses.