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Data Sheet
LMG3425R050
600V 50mΩ GaN FET With Integrated Driver,
Protection, and Temperature Reporting
1 Features
- Qualified for JEDEC JEP180 for hard-switching topologies
- 600V GaN-on-Si FET with integrated gate driver
- Integrated high precision
gate bias voltage
- 200V/ns FET hold-off
- 3.6MHz
switching frequency
- 20V/ns to 150V/ns slew rate for
optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V
supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit
protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from
internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM
output
- Ideal diode mode reduces third-quadrant losses