SNOSDA7F September 2020 – August 2024 LMG3422R030 , LMG3426R030
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.
PART NUMBER | PACKAGE(1) | PACKAGE SIZE(2) |
---|---|---|
LMG3422R030 | RQZ (VQFN, 54) | 12.00mm × 12.00mm |
LMG3426R030 | ||
LMG3427R030 |
PART NUMBER | ZERO-VOLTAGE DETECTION FEATURE | ZERO-CURRENT DETECTION FEATURE |
---|---|---|
LMG3422R030 | — | — |
LMG3426R030 | Yes | — |
LMG3427R030 | — | Yes |