SLUSFB9 November 2023 LMG3612
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The IN pin is used to turn the GaN power FET on and off.
The IN pin has a typical 1-V input-voltage-threshold hysteresis for noise immunity. The pin also has a typical 400-kΩ pull-down resistance to protect against floating inputs. The 400 kΩ saturates for nominal input voltages above 4 V to limit the maximum input pull-down current to a typical 10 µA.
The IN turn-on action is blocked by the following conditions:
The AUX UVLO and overtemperature protection are independent of the IN logic state. Figure 7-2 shows the IN independent blocking condition operation.