SLUSFB3 November 2023 LMG3616
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
GAN POWER FET | ||||||
td(on)(Idrain) | Drain current turn-on delay time | From VIN > VIN,IT+ to ID > 25 mA, VBUS = 400 V, LHB current = 1 A, at following slew rate settings, see GaN Power FET Switching Parameters | ||||
slew rate setting 0 (slowest) | 77 | ns | ||||
slew rate setting 1 | 34 | |||||
slew rate setting 2 | 28 | |||||
slew rate setting 3 (fastest) | 23 | |||||
td(on) | Turn-on delay time | From VIN > VIN,IT+ to VDS < 320 V, VBUS = 400 V, LHB current = 1 A, at following slew rate settings, see GaN Power FET Switching Parameters | ||||
slew rate setting 0 (slowest) | 97 | ns | ||||
slew rate setting 1 | 44 | |||||
slew rate setting 2 | 35 | |||||
slew rate setting 3 (fastest) | 26 | |||||
td(off) | Turn-off delay time | From VIN < VIN,IT– to VDS > 80 V, VBUS = 400 V, LHB current = 1 A, (independent of slew rate setting), see GaN Power FET Switching Parameters | 32 | ns | ||
tf(off) | Turn-off fall time | From VDS > 80 V to VDS > 320 V, VBUS = 400 V, LHB current = 1 A, (independent of slew rate setting), see GaN Power FET Switching Parameters | 24 | ns | ||
Turn-on slew rate | From VDS < 250 V to VDS < 150 V, TJ = 25℃, VBUS = 400 V, LHB current = 1 A, at following slew rate settings, see GaN Power FET Switching Parameters | |||||
slew rate setting 0 (slowest) | 20 | V/ns | ||||
slew rate setting 1 | 50 | |||||
slew rate setting 2 | 75 | |||||
slew rate setting 3 (fastest) | 150 |