SLUSFB8A September 2023 – November 2023 LMG3626
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The EN pin is used to toggle the device between the active and standby modes described in the Device Functional Modes section.
The IN pin is used to turn the GaN power FET on and off.
The input control pins have a typical 1-V input-voltage-threshold hysteresis for noise immunity. The pins also have a typical 400-kΩ pull-down resistance to protect against floating inputs. The 400 kΩ saturates for nominal input voltages above 4 V to limit the maximum input pull-down current to a typical 10 µA.
The IN turn-on action is blocked by the following conditions:
The standby mode, AUX UVLO, and overtemperature protection are independent of the IN logic state. Figure 7-3 shows the IN independent blocking condition operation.
Meanwhile, overcurrent protection only acts after IN has turned on the GaN power FET. See the Overcurrent Protection section for the details.