SNOSCY4E March   2015  – October 2018 LMG5200

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay and Mismatch Measurement
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Control Inputs
      2. 8.3.2 Start-up and UVLO
      3. 8.3.3 Bootstrap Supply Voltage Clamping
      4. 8.3.4 Level Shift
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 VCC Bypass Capacitor
        2. 9.2.2.2 Bootstrap Capacitor
        3. 9.2.2.3 Power Dissipation
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Package Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Integrated 15-mΩ GaN FETs and Driver
  • 80-V Continuous, 100-V Pulsed Voltage Rating
  • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
  • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
  • Ideal for Isolated and Non-Isolated Applications
  • Gate Driver Capable of Up to 10 MHz Switching
  • Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
  • Supply Rail Undervoltage Lockout Protection
  • Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
  • Low Power Consumption