SBOSAF0A april   2023  – august 2023 LMH32401-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: Gain = 2 kΩ
    6. 6.6 Electrical Characteristics: Gain = 20 kΩ
    7. 6.7 Electrical Characteristics: Both Gains
    8. 6.8 Electrical Characteristics: Logic Threshold and Switching Characteristics
    9. 6.9 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Switched Gain Transimpedance Amplifier
      2. 7.3.2 Clamping and Input Protection
      3. 7.3.3 ESD Protection
      4. 7.3.4 Differential Output Stage
    4. 7.4 Device Functional Modes
      1. 7.4.1 Ambient Light Cancellation (ALC) Mode
      2. 7.4.2 Power-Down Mode (Multiplexer Mode)
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics: Gain = 20 kΩ

at VDD = 3.3 V, VOCM = open, VOD = 0 V, CPD (1) = 1 pF, EN = 0 V, VGAIN = 3.3 V, IDC_EN = 3.3 V, RL = 100 Ω, and TA = 25℃ (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
SSBW Small-signal bandwidth VOUT = 100 mVPP 275 MHz
LSBW Large-signal bandwidth VOUT = 1 VPP 275 MHz
tR, tF Rise and fall time VOUT = 100 mVPP, pulse duration = 10 ns 1.3 ns
Slew rate(2) VOUT = 1 VPP, pulse duration = 10 ns 700 V/µs
Overload pulse extension(3) IIN = 10 mA, pulse duration = 10 ns 4 ns
iN Integrated input current noise f = 250 MHz 49 nARMS
DC PERFORMANCE
Z21 Small-signal transimpedance gain(4) 17 20 22.5 kΩ
VOD Differential output offset voltage
(VOUT– – VOUT+)		 –20 5 20 mV
ΔVOD/ΔTA Differential output offset voltage drift ±17.5 µV/°C
INPUT PERFORMANCE
RIN Input resistance 270 350 410 Ω
VIN Default input bias voltage Input pin floating 2.42 2.47 2.52 V
ΔVIN/ΔTA Default input bias voltage drift Input pin floating 1.1 mV/°C
IIN_LIN
 DC input current range Z21 < 3-dB degradation from IIN = 5 µA 60 72 µA
(1) Input capacitance of photodiode.
(2) Average of rising and falling slew rate.
(3) Pulse duration extension measured at 50% of pulse height of a square wave.
(4) Gain measured at the amplifier output pins when driving a 100-Ω resistive load. At higher resistor loads, the gain increases.