SNOSAL8D April   2006  – September 2021 LMH6321

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Operating Ratings
    3. 5.3 Thermal Information
    4. 5.4 ±15 V Electrical Characteristics
    5. 5.5 ±5 V Electrical Characteristics
    6. 5.6 Typical Characteristics
  6. 6Application Hints
    1. 6.1  Buffers
    2. 6.2  Supply Bypassing
    3. 6.3  Load Impedence
    4. 6.4  Source Inductance
    5. 6.5  Overvoltage Protection
    6. 6.6  Bandwidth and Stability
    7. 6.7  Output Current and Short Circuit Protection
    8. 6.8  Thermal Management
      1. 6.8.1 Heatsinking
      2. 6.8.2 Determining Copper Area
      3. 6.8.3 Procedure
      4. 6.8.4 Example
    9. 6.9  Error Flag Operation
    10. 6.10 Single Supply Operation
    11. 6.11 Slew Rate
  7. 7Device and Documentation Support
    1. 7.1 Receiving Notification of Documentation Updates
    2. 7.2 Support Resources
    3. 7.3 Trademarks
    4. 7.4 Electrostatic Discharge Caution
    5. 7.5 Glossary
  8. 8Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTW|7
  • DDA|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.