SNOSAL8D April   2006  – September 2021 LMH6321

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Operating Ratings
    3. 5.3 Thermal Information
    4. 5.4 ±15 V Electrical Characteristics
    5. 5.5 ±5 V Electrical Characteristics
    6. 5.6 Typical Characteristics
  6. 6Application Hints
    1. 6.1  Buffers
    2. 6.2  Supply Bypassing
    3. 6.3  Load Impedence
    4. 6.4  Source Inductance
    5. 6.5  Overvoltage Protection
    6. 6.6  Bandwidth and Stability
    7. 6.7  Output Current and Short Circuit Protection
    8. 6.8  Thermal Management
      1. 6.8.1 Heatsinking
      2. 6.8.2 Determining Copper Area
      3. 6.8.3 Procedure
      4. 6.8.4 Example
    9. 6.9  Error Flag Operation
    10. 6.10 Single Supply Operation
    11. 6.11 Slew Rate
  7. 7Device and Documentation Support
    1. 7.1 Receiving Notification of Documentation Updates
    2. 7.2 Support Resources
    3. 7.3 Trademarks
    4. 7.4 Electrostatic Discharge Caution
    5. 7.5 Glossary
  8. 8Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTW|7
  • DDA|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.8.3 Procedure

  1. First determine the maximum power dissipated by the buffer, PD(MAX). For the simple case of the buffer driving a resistive load, and assuming equal supplies, PD(MAX) is given by:
    Equation 7. PD(MAX) = IS (2V+) + V+2/4RL

    where

    • IS = quiescent supply current
  2. Determine the maximum allowable die temperature rise,
    Equation 8. TR(MAX) = TJ(MAX)-TA(MAX) = PD(MAX)θJA
  3. Using the calculated value of TR(MAX) and PD(MAX) the required value for junction to ambient thermal resistance can be found:
    Equation 9. θJA = TR(MAX)/PD(MAX)
  4. Finally, using this value for θJA choose the minimum value of copper area from Figure 6-4.